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Pub. No.:    WO/2010/122274    International Application No.:    PCT/GB2009/001037
Publication Date: 28.10.2010 International Filing Date: 24.04.2009
Chapter 2 Demand Filed:    11.01.2011    
H01L 29/786 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza KadomaKadoma-shi Osaka 571-8501 (JP) (For All Designated States Except US).
CAMBRIDGE ENTERPRISE LTD. [GB/GB]; The Old Schools, Trinity Lane, Cambridge Cambridgeshire CB2 1TN (GB) (For All Designated States Except US).
MORI, Kiyotaka [JP/GB]; (GB) (For US Only).
SIRRINGHAUS, Henning [DE/GB]; (GB) (For US Only).
BANGER, Kulbinder, Kumar [GB/GB]; (GB) (For US Only).
PETERSON, Rebecca, Lorenz [US/GB]; (GB) (For US Only)
Inventors: MORI, Kiyotaka; (GB).
BANGER, Kulbinder, Kumar; (GB).
PETERSON, Rebecca, Lorenz; (GB)
Agent: GILL JENNINGS & EVERY LLP; The Broadgate Tower 20 Primrose Street London EC2A 2ES (GB)
Priority Data:
Abstract: front page image
(EN)The present invention provides highly-stable oxide semiconductors which make it possible to provide devices having an excellent stability. The oxide semiconductor according to the present invention is an amorphous oxide semiconductor including at least one of indium (In), zinc (Zn), and Tin (Sn) and at least one of an alkaline metal or an alkaline earth metal having an ionic radius greater than that of gallium (Ga), and oxygen.
(FR)La présente invention a trait à des semi-conducteurs à oxyde hautement stables qui permettent de fournir des dispositifs dotés d'une excellente stabilité. Le semi-conducteur à oxyde selon la présente invention est un semi-conducteur à oxyde amorphe incluant de l'indium (In), du zinc (Zn) et/ou de l'étain (Sn) ainsi qu'un métal alcalin et/ou un métal alcalino-terreux ayant un rayon ionique supérieur à celui du gallium (Ga) et de l'oxygène.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)