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1. (WO2010120954) DOPED ZRO2 CAPACITOR MATERIALS AND STRUCTURES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/120954    International Application No.:    PCT/US2010/031125
Publication Date: 21.10.2010 International Filing Date: 14.04.2010
IPC:
H01G 4/018 (2006.01)
Applicants: ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive Danbury, CT 06810-4169 (US) (For All Designated States Except US).
ROEDER, Jeffrey, F. [US/US]; (US) (For US Only).
HENDRIX, Bryan, C. [US/US]; (US) (For US Only).
BILODEAU, Steven, M. [US/US]; (US) (For US Only).
STAUF, Gregory, T. [US/US]; (US) (For US Only).
CHEN, Tianniu [CN/US]; (US) (For US Only).
CAMERON, Thomas, M. [CA/US]; (US) (For US Only).
XU, Chongying [US/US]; (US) (For US Only)
Inventors: ROEDER, Jeffrey, F.; (US).
HENDRIX, Bryan, C.; (US).
BILODEAU, Steven, M.; (US).
STAUF, Gregory, T.; (US).
CHEN, Tianniu; (US).
CAMERON, Thomas, M.; (US).
XU, Chongying; (US)
Agent: HULTQUIST, Steven, J.; Intellectual Property/Technology Law P.O. Box 14329 Research Triangle Park, NC 27709 (US)
Priority Data:
61/170,071 16.04.2009 US
Title (EN) DOPED ZRO2 CAPACITOR MATERIALS AND STRUCTURES
(FR) MATÉRIAUX ET STRUCTURES DE CONDENSATEURS À ZRO2 DOPÉ
Abstract: front page image
(EN)A composite dielectric material including an early transition metal or metal oxide base material and a dopant, co-deposited, alloying or layering secondary material, selected from among Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, and Mg, and oxides of such metals, and alumina as a dopant or alloying secondary material. Such composite dielectric material can be formed by vapor deposition processes, e.g., ALD, using suitable precursors, to form microelectronic devices such as ferroelectric high k capacitors, gate structures, DRAMs, and the like.
(FR)La présente invention concerne un matériau diélectrique composite comprenant un métal de transition précoce ou un matériau à base d'oxyde métallique et un dopant, un matériau secondaire d'alliage ou de couchage co-déposé, choisi parmi Nb, Ge, Ta, La, Y, Ce, Pr, Nd, Gd, Dy, Sr, Ba, Ca, et Mg, et des oxydes de ces métaux, et de l'alumine comme dopant ou matériau secondaire d'alliage. Ledit matériau diélectrique composite peut être formé par des procédés de dépôt en phase vapeur, par exemple par dépôt atomique de couche (ALD), à l'aide de précurseurs appropriés, pour former des dispositifs microélectroniques tels que des condensateurs ferroélectriques à constante diélectrique élevée, des structures à barrière, des mémoires dynamiques (DRAM), et similaires.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)