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Machine translation
1. (WO2010120948) ENHANCED FOCUSED ION BEAM ETCHING OF DIELECTRICS AND SILICON
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/120948 International Application No.: PCT/US2010/031118
Publication Date: 21.10.2010 International Filing Date: 14.04.2010
IPC:
H01L 21/3213 (2006.01) ,H01L 21/02 (2006.01)
Applicants: MAKAROV, Vladimir, V.[RU/US]; US (UsOnly)
TIZA LAB, L.L.C.[US/US]; 1665 South Main Street Milpitas, CA 95035, US (AllExceptUS)
Inventors: MAKAROV, Vladimir, V.; US
Agent: YOUNG, Barry, N.; Law Offices of Barry N. Young 200 Page Mill Road, Suite 102 Palo Alto, CA 94306, US
Priority Data:
12/426,02717.04.2009US
Title (EN) ENHANCED FOCUSED ION BEAM ETCHING OF DIELECTRICS AND SILICON
(FR) GRAVURE IONIQUE FOCALISÉE AMÉLIORÉE DE DIÉLECTRIQUES ET DE SILICIUM
Abstract: front page image
(EN) Silicon, silicon dielectrics and low-k dielectrics are etched in a focused ion beam process using gaseous fluorinating etchants selected from the group of triethylamine trihydrofluoride (TEATHF) and xenon fluoride. Xenon fluoride is combined with a secondary protecting agent to avoid undesired corrosion of bare silicon. The protecting agent may be an oxidizing agent such as oxygen, perfluorotripentylamine (PFTPA), or a heavy completely fluorinated hydrocarbon.
(FR) Le silicium, les diélectriques de silicium et les diélectriques k faibles sont gravés dans un processus par faisceau d'ions focalisé utilisant des agents de gravure de fluoration gazeux sélectionnés dans le groupe comprenant le trihydrofluorure de triéthylamine (TEATHF) et le fluorure de xénon. Le fluorure de xénon est combiné avec un agent de protection secondaire afin d'éviter toute corrosion indésirable du silicium nu. L'agent de protection peut être un oxydant tel que l'oxygène, le perfluorotripentylamine (PFTPA), ou un hydrocarbure lourd entièrement fluoré.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)