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1. (WO2010120819) OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES FOR LASER APPLICATIONS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/120819 International Application No.: PCT/US2010/030939
Publication Date: 21.10.2010 International Filing Date: 13.04.2010
IPC:
H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
SORAA, INC. [US/US]; 485 Pine Avenue Goleta, California 93117, US (AllExceptUS)
RARING, James W. [US/US]; US (UsOnly)
FEEZEL, Daniel F. [US/US]; US (UsOnly)
PFISTER, Nicholas J. [US/US]; US (UsOnly)
SHARMA, Rajat [IN/US]; US (UsOnly)
Inventors:
RARING, James W.; US
FEEZEL, Daniel F.; US
PFISTER, Nicholas J.; US
SHARMA, Rajat; US
Agent:
COLWELL, Robert C.; TOWNSEND AND TOWNSEND AND CREW LLP Two Embarcadero Center, 8th Floor San Francisco, California 94111, US
Priority Data:
61/168,92613.04.2009US
61/243,50217.09.2009US
Title (EN) OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES FOR LASER APPLICATIONS
(FR) STRUCTURE DE DISPOSITIF OPTIQUE METTANT EN ŒUVRE DES SUBSTRATS À BASE DE NITRURE DE GALLIUM POUR DES APPLICATIONS LASER
Abstract:
(EN) An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about -2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region.
(FR) L'invention porte sur un dispositif optique qui comprend un élément de substrat à base de nitrure de gallium comportant une région de surface cristalline non polaire de plan m, le dispositif étant caractérisé par une orientation d'environ – 2 degrés à environ 2 degrés vers (000-1) et inférieure à environ 0,5 degré vers (11-20). Le dispositif comprend également une région de bande laser formée de manière à chevaucher une partie de la région de surface d'orientation cristalline non polaire de plan m. Une première facette de face c clivée est disposée sur une extrémité de la région de bande laser, et une seconde facette de face c clivée est disposée sur l'autre extrémité de la région de bande laser.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2012523718CN102396083