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1. (WO2010120765) IMPLANT MASK WITH MOVEABLE MASK SEGMENTS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/120765 International Application No.: PCT/US2010/030874
Publication Date: 21.10.2010 International Filing Date: 13.04.2010
IPC:
H01L 21/265 (2006.01) ,H01L 21/266 (2006.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
266
using masks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants: VOPAT, Robert, B.[US/US]; US (UsOnly)
CARLSON, Charles[US/US]; US (UsOnly)
WEAVER, William, T.[US/US]; US (UsOnly)
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.[US/US]; 35 Dory Road Gloucester, MA 01930, US (AllExceptUS)
Inventors: VOPAT, Robert, B.; US
CARLSON, Charles; US
WEAVER, William, T.; US
Agent: LUCEK, Nathaniel; Varian Semiconductor Equipment Associates, Inc. 35 Dory Road Gloucester, MA 01930, US
Priority Data:
12/757,61609.04.2010US
61/170,14617.04.2009US
Title (EN) IMPLANT MASK WITH MOVEABLE MASK SEGMENTS
(FR) MASQUE POUR IMPLANTS AVEC SEGMENTS DE MASQUE AMOVIBLES
Abstract:
(EN) This apparatus has two mask segments. Each mask segment has apertures that an ion beam may pass through. These mask segments can move between a first and second position using hinges. One or more workpieces are disposed behind the mask segments when these mask segments are in a second position. The two mask segments are configured to cover the one or more workpieces in one instance. Ions are implanted into the one or more workpieces through the apertures in the mask segments.
(FR) La présente invention concerne un appareil présentant deux segments de masque. Chaque masque de segment présente des ouvertures à travers lesquelles un faisceau d'ions peut passer. Ces segments de masque peuvent se déplacer entre une première et une seconde position à l'aide de charnières. Une ou plusieurs pièces de fabrication sont disposées derrière les segments de masque lorsque ces segments de masque se trouvent dans la seconde position. Les deux segments de masque sont conçus pour recouvrir la ou les pièces de fabrication dans un exemple. Des ions sont implantés dans la ou les pièces de fabrication à travers les ouvertures dans les segments de masque.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)