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Machine translation
1. (WO2010120704) POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH EMBEDDED DIELECTRIC LAYERS CONTAINING PERMANENT CHARGES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/120704    International Application No.:    PCT/US2010/030790
Publication Date: 21.10.2010 International Filing Date: 12.04.2010
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01)
Applicants: MAXPOWER SEMICONDUCTOR INC. [US/US]; 4800 Great America Parkway Suite 205 Santa Clara, CA 95054 (US) (For All Designated States Except US).
DARWISH, Mohamed, N. [US/US]; (US) (For US Only).
ZENG, Jun [US/US]; (US) (For US Only).
BLANCHARD, Richard, A. [US/US]; (US) (For US Only)
Inventors: DARWISH, Mohamed, N.; (US).
ZENG, Jun; (US).
BLANCHARD, Richard, A.; (US)
Agent: GROOVER, Robert, O.; Box 802889 Dallas, TX 75380 (US)
Priority Data:
61/168,794 13.04.2009 US
Title (EN) POWER SEMICONDUCTOR DEVICES, METHODS, AND STRUCTURES WITH EMBEDDED DIELECTRIC LAYERS CONTAINING PERMANENT CHARGES
(FR) DISPOSITIFS À SEMI-CONDUCTEURS ÉLECTRIQUES, PROCÉDÉS, ET STRUCTURES À COUCHES DIÉLECTRIQUES INTÉGRÉES CONTENANT DES CHARGES PERMANENTES
Abstract: front page image
(EN)Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.
(FR)L'invention concerne des dispositifs électriques utilisant des tranchées remplies avec une charge permanente sur leurs parois latérales ou près de celles-ci. Ces tranchées s'étendent verticalement dans une région de dérive.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)