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1. (WO2010120685) SCRUBBER CLEAN BEFORE OXIDE CHEMICAL MECHANICAL POLISH (CMP) FOR REDUCED MICROSCRATCHES AND IMPROVED YIELDS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/120685    International Application No.:    PCT/US2010/030734
Publication Date: 21.10.2010 International Filing Date: 12.04.2010
IPC:
H01L 21/02 (2006.01), H01L 21/3105 (2006.01)
Applicants: MICROCHIP TECHNOLOGY INCORPORATED [US/US]; 2355 West Chandler Blvd. Chandler, AZ 85224-6199 (US) (For All Designated States Except US).
WILLIAMS, Jacob, L. [US/US]; (US) (For US Only)
Inventors: WILLIAMS, Jacob, L.; (US)
Agent: SLAYDEN, Bruce, W.; King & Spalding LLP 401 Congress Ave., Suite 3200 Austin, TX 78701 (US)
Priority Data:
12/730,003 23.03.2010 US
61/212,581 13.04.2009 US
Title (EN) SCRUBBER CLEAN BEFORE OXIDE CHEMICAL MECHANICAL POLISH (CMP) FOR REDUCED MICROSCRATCHES AND IMPROVED YIELDS
(FR) NETTOYAGE À LA BROSSE AVANT UN POLISSAGE CHIMICO-MÉCANIQUE (CMP) À L'OXYDE POUR RÉDUIRE LES MICRO-RAYURES ET DES RENDEMENTS AMÉLIORÉS
Abstract: front page image
(EN)A method for fabricating semiconductors is provided that includes an oxide chemical mechanical polish (CMP) step. Prior to performing the CMP of an integrated circuit semiconductor silicon wafer, a number of steps are performed. The silicon wafer is scrubbed with a brush using a liquid cleaner. The silicon wafer is rinsed with deionized water (DIW). Finally, the silicon wafer is dried.
(FR)L'invention porte sur un procédé de fabrication de semi-conducteurs qui comprend une étape de polissage chimico-mécanique (CMP) à l'oxyde. Avant d'effectuer le CMP d'une tranche de silicium semi-conducteur de circuit intégré, de nombreuses étapes sont effectuées. La tranche de silicium est nettoyée avec une brosse à l'aide d'un nettoyant liquide. La tranche de silicium est rincée avec de l'eau désionisée (DIW). Finalement, la tranche de silicium est séchée.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)