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1. (WO2010120685) SCRUBBER CLEAN BEFORE OXIDE CHEMICAL MECHANICAL POLISH (CMP) FOR REDUCED MICROSCRATCHES AND IMPROVED YIELDS

Pub. No.:    WO/2010/120685    International Application No.:    PCT/US2010/030734
Publication Date: Fri Oct 22 01:59:59 CEST 2010 International Filing Date: Tue Apr 13 01:59:59 CEST 2010
IPC: H01L 21/02
H01L 21/3105
Applicants: MICROCHIP TECHNOLOGY INCORPORATED
WILLIAMS, Jacob, L.
Inventors: WILLIAMS, Jacob, L.
Title: SCRUBBER CLEAN BEFORE OXIDE CHEMICAL MECHANICAL POLISH (CMP) FOR REDUCED MICROSCRATCHES AND IMPROVED YIELDS
Abstract:
A method for fabricating semiconductors is provided that includes an oxide chemical mechanical polish (CMP) step. Prior to performing the CMP of an integrated circuit semiconductor silicon wafer, a number of steps are performed. The silicon wafer is scrubbed with a brush using a liquid cleaner. The silicon wafer is rinsed with deionized water (DIW). Finally, the silicon wafer is dried.