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Machine translation
1. (WO2010120458) METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/120458    International Application No.:    PCT/US2010/028507
Publication Date: 21.10.2010 International Filing Date: 24.03.2010
IPC:
H01L 21/8247 (2006.01), H01L 27/115 (2006.01)
Applicants: MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Boise, ID 83716 (US) (For All Designated States Except US).
QUICK, Timothy, A. [US/US]; (US) (For US Only).
MARSH, Eugene, P. [US/US]; (US) (For US Only)
Inventors: QUICK, Timothy, A.; (US).
MARSH, Eugene, P.; (US)
Agent: MATKIN, Mark, S.; Wells St. John P.S. 601 West First Avenue, Suite 1300 Spokane, WA 99201 (US)
Priority Data:
12/424,387 15.04.2009 US
Title (EN) METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY
(FR) PROCÉDÉS DE DÉPÔT D'UN MATÉRIAU À CHANGEMENT DE PHASE COMPORTANT DE L'ANTIMOINE SUR UN SUBSTRAT ET PROCÉDÉS DE FABRICATION DE CIRCUITS MÉMOIRES À CHANGEMENT DE PHASE
Abstract: front page image
(EN)A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
(FR)La présente invention concerne un procédé de dépôt d'un matériau à changement de phase comportant de l'antimoine sur un substrat. Ledit procédé comprend les étapes consistant à apporter un agent réducteur et du Sb(OR)3 vaporisé jusqu'à un substrat, R étant un radical alkyle, puis à constituer, à partir de ceux-ci, un matériau à changement de phase comportant de l'antimoine sur ledit substrat. Le matériau à changement de phase présente un pourcentage atomique d'oxygène inférieur ou égal à 10 et comporte un autre métal en plus de l'antimoine.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)