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1. (WO2010120458) METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/120458 International Application No.: PCT/US2010/028507
Publication Date: 21.10.2010 International Filing Date: 24.03.2010
IPC:
H01L 21/8247 (2006.01) ,H01L 27/115 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
Applicants:
QUICK, Timothy, A. [US/US]; US (UsOnly)
MARSH, Eugene, P. [US/US]; US (UsOnly)
MICRON TECHNOLOGY, INC. [US/US]; 8000 South Federal Way Boise, ID 83716, US (AllExceptUS)
Inventors:
QUICK, Timothy, A.; US
MARSH, Eugene, P.; US
Agent:
MATKIN, Mark, S.; Wells St. John P.S. 601 West First Avenue, Suite 1300 Spokane, WA 99201, US
Priority Data:
12/424,38715.04.2009US
Title (EN) METHODS OF DEPOSITING ANTIMONY-COMPRISING PHASE CHANGE MATERIAL ONTO A SUBSTRATE AND METHODS OF FORMING PHASE CHANGE MEMORY CIRCUITRY
(FR) PROCÉDÉS DE DÉPÔT D'UN MATÉRIAU À CHANGEMENT DE PHASE COMPORTANT DE L'ANTIMOINE SUR UN SUBSTRAT ET PROCÉDÉS DE FABRICATION DE CIRCUITS MÉMOIRES À CHANGEMENT DE PHASE
Abstract:
(EN) A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
(FR) La présente invention concerne un procédé de dépôt d'un matériau à changement de phase comportant de l'antimoine sur un substrat. Ledit procédé comprend les étapes consistant à apporter un agent réducteur et du Sb(OR)3 vaporisé jusqu'à un substrat, R étant un radical alkyle, puis à constituer, à partir de ceux-ci, un matériau à changement de phase comportant de l'antimoine sur ledit substrat. Le matériau à changement de phase présente un pourcentage atomique d'oxygène inférieur ou égal à 10 et comporte un autre métal en plus de l'antimoine.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)