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1. (WO2010119928) FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETORESISTIVE EFFECT ELEMENT AND SPINTRONICS DEVICE EACH COMPRISING SAME

Pub. No.:    WO/2010/119928    International Application No.:    PCT/JP2010/056785
Publication Date: Fri Oct 22 01:59:59 CEST 2010 International Filing Date: Fri Apr 16 01:59:59 CEST 2010
IPC: H01L 43/10
G11B 5/39
H01L 21/8246
H01L 27/105
H01L 29/82
H01L 43/08
Applicants: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
独立行政法人物質・材料研究機構
SUKEGAWA Hiroaki
介川 裕章
INOMATA Koichiro
猪俣 浩一郎
SHAN Rong
シャン ロン
KODZUKA Masaya
小塚 雅也
HONO Kazuhiro
宝野 和博
FURUBAYASHI Takao
古林 孝夫
WANG Wenhong
ワン ウェンホン
Inventors: SUKEGAWA Hiroaki
介川 裕章
INOMATA Koichiro
猪俣 浩一郎
SHAN Rong
シャン ロン
KODZUKA Masaya
小塚 雅也
HONO Kazuhiro
宝野 和博
FURUBAYASHI Takao
古林 孝夫
WANG Wenhong
ワン ウェンホン
Title: FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETORESISTIVE EFFECT ELEMENT AND SPINTRONICS DEVICE EACH COMPRISING SAME
Abstract:
Disclosed a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic substance having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic substance is substantially MgAl2O4. The ferromagnetic tunnel junction structure is also characterized in that at least one of ferromagnetic layers comprises a Co-based full-Heusler alloy having an L21 or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full-Heusler alloy comprises a substance represented by the following formula: Co2FeAlxSi1-x (0 ≤ x ≤ 1). Also disclosed are a magnetoresistive effect element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.