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1. (WO2010119887) Cu-Ga ALLOY SPUTTERING TARGET AND PROCESS FOR MANUFACTURE THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/119887 International Application No.: PCT/JP2010/056658
Publication Date: 21.10.2010 International Filing Date: 14.04.2010
IPC:
C23C 14/34 (2006.01) ,B22F 9/08 (2006.01) ,C22C 9/00 (2006.01)
Applicants: MATSUMURA Hiromi; null (UsOnly)
NANBU Akira; null (UsOnly)
EHIRA Masaya; null (UsOnly)
OKAMOTO Shinya; null (UsOnly)
KOBELCO RESEARCH INSTITUTE, INC.[JP/JP]; 1-5-1, Wakinohama-kaigan-dori, Chuo-ku, Kobe-shi, Hyogo 6510073, JP (AllExceptUS)
Inventors: MATSUMURA Hiromi; null
NANBU Akira; null
EHIRA Masaya; null
OKAMOTO Shinya; null
Agent: OGURI Shohei; Eikoh Patent Firm, Toranomon East Bldg. 10F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2009-09848114.04.2009JP
2010-06128017.03.2010JP
Title (EN) Cu-Ga ALLOY SPUTTERING TARGET AND PROCESS FOR MANUFACTURE THEREOF
(FR) CIBLE DE PULVÉRISATION CATHODIQUE EN ALLIAGE Cu-Ga ET SON PROCÉDÉ DE FABRICATION
(JA) Cu-Ga合金スパッタリングターゲットおよびその製造方法
Abstract: front page image
(EN) Disclosed is a Cu-Ga alloy sputtering target which enables the formation of a Cu-Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu-Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 μm or less, and has a porosity of 0.1% or less.
(FR) L'invention porte sur une cible de pulvérisation cathodique en alliage Cu-Ga qui permet la formation d'un film de pulvérisation cathodique de Cu-Ga ayant une excellente uniformité dans la composition des composants du film (uniformité de film), permet la réduction de l'apparition de la production d'un arc électrique durant la pulvérisation, présente une résistance élevée, et ne subit pas de fissuration pendant la pulvérisation cathodique. De façon spécifique, l'invention porte sur une cible de pulvérisation cathodique en alliage Cu-Ga qui comprend un alliage à base de Cu contenant Ga, présente un diamètre moyen de particule cristalline de 10 μm ou moins, et présente une porosité de 0,1% ou moins.
(JA)  本発明は、膜の成分組成の均一性(膜均一性)に優れたCu-Gaスパッタリング膜を形成でき、かつ、スパッタリング中のアーキング発生を低減できると共に、強度が高くスパッタリング中の割れを抑制できるCu-Ga合金スパッタリングターゲットを提供する。本発明は、Gaを含むCu基合金を含むスパッタリングターゲットであって、その平均結晶粒径が10μm以下であり、かつ気孔率が0.1%以下であるCu-Ga合金スパッタリングターゲットに関する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)