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1. (WO2010119749) APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/119749    International Application No.:    PCT/JP2010/054860
Publication Date: 21.10.2010 International Filing Date: 19.03.2010
IPC:
C30B 29/36 (2006.01), C30B 23/06 (2006.01)
Applicants: BRIDGESTONE CORPORATION [JP/JP]; 10-1, Kyobashi 1-chome, Chuo-ku, Tokyo 1048340 (JP) (For All Designated States Except US).
OKUNO, Kenichiro; (For US Only)
Inventors: OKUNO, Kenichiro;
Agent: MIYOSHI, Hidekazu; Toranomon Kotohira Tower, 2-8, Toranomon 1-chome, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
2009-100295 16.04.2009 JP
Title (EN) APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
(FR) APPAREIL ET PROCÉDÉ DESTINÉS À LA PRODUCTION D'UN MONOCRISTAL DE CARBURE DE SILICIUM
(JA) 炭化珪素単結晶の製造装置および炭化珪素単結晶の製造方法
Abstract: front page image
(EN)Disclosed is an apparatus (1) for producing a silicon carbide single crystal, which comprises: a reaction container main body (11) that is opened at the top and holds a sublimation material (50) in the bottom portion (11a); a cover member (12) for covering the upper opening (11b) of the reaction container main body (11); and a cylindrical guide member (70) that is arranged within the reaction container main body (11) for the purpose of guiding the growth of a silicon carbide single crystal when the silicon carbide single crystal is grown from a seed crystal (60). The guide member (70) is separably configured of a first split body and a second split body.
(FR)La présente invention concerne un appareil (1) destiné à la production d'un monocristal de carbure de silicium, ledit appareil comprenant : un corps principal de récipient réactionnel (11) qui est ouvert à son sommet et contient un matériel de sublimation (50) dans sa partie inférieure (11a) ; un élément de couvercle (12) servant à recouvrir l'ouverture supérieure (11b) du corps principal de récipient réactionnel (11) ; et un élément de guidage cylindrique (70) qui est installé à l'intérieur du corps principal de récipient réactionnel (11) dans le but de guider la croissance d'un monocristal de carbure de silicium lorsque ledit monocristal est mis à croître à partir d'un germe cristallin (60). L'élément de guidage (70) est formé, d'une manière démontable, d'un premier corps séparé et d'un second corps séparé.
(JA) 上部が開口され、底部11aに昇華用原料50を収容する反応容器本体11と、該反応容器本体11の上部開口11bを覆う蓋体12と、前記反応容器本体11内に設けられ、前記種結晶60が成長して炭化珪素単結晶になる際に、該炭化珪素単結晶の成長をガイドする筒状のガイド部材70とを備えた炭化珪素単結晶の製造装置1である。ガイド部材70は、第1分割体と第2分割体とに分離可能に構成されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)