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Machine translation
1. (WO2010119224) RAM MEMORY ELEMENT WITH ONE TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/119224    International Application No.:    PCT/FR2010/050716
Publication Date: 21.10.2010 International Filing Date: 13.04.2010
IPC:
G11C 11/404 (2006.01), G11C 11/4076 (2006.01)
Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE [FR/FR]; 3, Rue Michel Ange F-75794 Paris Cedex 16 (FR) (For All Designated States Except US).
UNIVERSIDAD DE GRANADA [ES/ES]; Parque Tecnologico de Ciencias de la Salud Edificio BIC Granada Avda. de la Innovacion, 1 Planta 1 E-18.100 Armilla (granada) (ES) (For All Designated States Except US).
CRISTOLOVEANU, Sorin, Ioan [FR/FR]; (FR) (For US Only).
RODRIGUEZ, Noel [ES/ES]; (ES) (For US Only).
GAMIZ, Francisco [ES/ES]; (ES) (For US Only)
Inventors: CRISTOLOVEANU, Sorin, Ioan; (FR).
RODRIGUEZ, Noel; (ES).
GAMIZ, Francisco; (ES)
Agent: CABINET BEAUMONT; 1, Rue Champollion F-38000 Grenoble (FR)
Priority Data:
0952452 15.04.2009 FR
Title (EN) RAM MEMORY ELEMENT WITH ONE TRANSISTOR
(FR) POINT MEMOIRE RAM A UN TRANSISTOR
Abstract: front page image
(EN)The invention relates to a memory element consisting of an MOS transistor having a drain (8), a source (7) and a body region covered by an insulated gate (12), wherein the thickness of the body region is divided into two distinct regions (13, 14) separated by a portion of an insulating layer (16) extending parallel to the plane of the gate.
(FR)L'invention concerne un point mémoire constitué d'un transistor MOS ayant un drain (8), une source (7) et une région de corps revêtue d'une grille isolée (12), dans lequel la région de corps est divisée dans son épaisseur en deux régions distinctes (13, 14) séparées par une portion de couche isolante (16) s 'étendant parallèlement au plan de la grille.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)