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1. (WO2010118640) METHOD AND APPARATUS FOR PREPARING THIN FILMS USING CONTINUOUS LIQUID PHASE EPITAXY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/118640 International Application No.: PCT/CN2010/000510
Publication Date: 21.10.2010 International Filing Date: 16.04.2010
IPC:
C30B 19/00 (2006.01) ,C30B 15/00 (2006.01) ,C30B 25/02 (2006.01) ,C23C 16/00 (2006.01) ,H01L 21/20 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
19
Liquid-phase epitaxial-layer growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants: ZHENG, Zhixiong[CN/CN]; CN (UsOnly)
ZHANG, Weina; CN (UsOnly)
MA, Dianjun[CN/CN]; CN (UsOnly)
NAN, Yi[CN/CN]; CN (UsOnly)
NAN AN SANJING SOLAR POWER CO., LTD.[CN/CN]; Optoelectronic Information Industry Base Xiamei Town, Nanan Fujian 362302, CN (AllExceptUS)
Inventors: ZHENG, Zhixiong; CN
ZHANG, Weina; CN
MA, Dianjun; CN
NAN, Yi; CN
Agent: SHOUCHUANG JUNHE PATENT AGENT CO., LTD. XIAMEN; 5F, Labour Force Market Building No. 191 Changqing Road Xiamen, Fujian 361012, CN
Priority Data:
200910111527.017.04.2009CN
Title (EN) METHOD AND APPARATUS FOR PREPARING THIN FILMS USING CONTINUOUS LIQUID PHASE EPITAXY
(FR) PROCÉDÉ ET APPAREIL D'ÉLABORATION DE FILMS MINCES PAR ÉPITAXIE CONTINUE EN PHASE LIQUIDE
(ZH) 一种连续液相外延法制备薄膜的方法和装置
Abstract:
(EN) A method and an apparatus for preparing thin films by using continuous liquid phase epitaxy are provided, which conduct the liquid phase epitaxial growth using a device with at least two rotation units (1, 2). Substrates can conduct an alternating operation of epitaxial growth in the rotation units (1, 2), and after each operation of the epitaxial growth, it is not needed to wait for the complete cooling of the chamber (3).Then the substrates can be raised up into one of the rotation units and cooled down after leaving the top of the chamber (3), at the same time, the second batch of the substrates in the other rotation units are rotated into the chamber (3), and then the second batch of epitaxial growth operation is conducted therein.
(FR) La présente invention concerne un procédé et un appareil permettant l'élaboration de films minces par épitaxie continue en phase liquide, la croissance épitaxiale en phase liquide étant menée au moyen d'un dispositif comportant au moins deux modules rotatifs (1, 2). Les substrats peuvent mener une croissance épitaxiale en alternance dans les modules rotatifs (1, 2), sans qu'il soit nécessaire d'attendre le refroidissement complet de la chambre (3) après chaque opération de croissance épitaxiale. En l'occurrence, les substrats peuvent être remontés dans l'un des modules rotatifs et refroidis après avoir quitté le haut de la chambre (3) pendant la mise en rotation du second lot de substrats se trouvant dans les autres modules rotatifs dans la chambre (3), après quoi on peut procéder à le seconde série d'opérations de croissance épitaxiale.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)