Search International and National Patent Collections

1. (WO2010118380) RESISTIVE-SWITCHING MEMORY ELEMENTS HAVING IMPROVED SWITCHING CHARACTERISTICS

Pub. No.:    WO/2010/118380    International Application No.:    PCT/US2010/030619
Publication Date: Fri Oct 15 01:59:59 CEST 2010 International Filing Date: Sat Apr 10 01:59:59 CEST 2010
IPC: H01L 21/8247
H01L 27/115
Applicants: INTERMOLECULAR, INC.
KUSE, Ronald, John
PHATAK, Prashant
CHIANG, Tony
MILLER, Michael
TONG, Jinhong
WU, Wen
HASHIM, Imran
Inventors: KUSE, Ronald, John
PHATAK, Prashant
CHIANG, Tony
MILLER, Michael
TONG, Jinhong
WU, Wen
HASHIM, Imran
Title: RESISTIVE-SWITCHING MEMORY ELEMENTS HAVING IMPROVED SWITCHING CHARACTERISTICS
Abstract:
Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode, the switching layer comprising a first metal oxide having a first bandgap greater than 4 electron volts (eV), the switching layer having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a second metal oxide having a second bandgap greater the first bandgap, the coupling layer having a second thickness that is less than 25 percent of the first thickness.