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1. (WO2010118212) GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/118212 International Application No.: PCT/US2010/030363
Publication Date: 14.10.2010 International Filing Date: 08.04.2010
IPC:
C03C 3/062 (2006.01) ,C03C 3/064 (2006.01) ,C03C 8/02 (2006.01) ,C03C 8/06 (2006.01) ,H01L 29/43 (2006.01) ,H01L 21/02 (2006.01) ,H01L 31/0224 (2006.01) ,H01B 1/16 (2006.01)
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3
Glass compositions
04
containing silica
062
with less than 40% silica by weight
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
3
Glass compositions
04
containing silica
062
with less than 40% silica by weight
064
containing boron
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
8
Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
02
Frit compositions, i.e. in a powdered or comminuted form
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
8
Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
02
Frit compositions, i.e. in a powdered or comminuted form
06
containing halogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1
Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
14
Conductive material dispersed in non-conductive inorganic material
16
the conductive material comprising metals or alloys
Applicants: LAUGHLIN, Brian, J.[US/US]; US (UsOnly)
CARROLL, Alan, Frederick[US/US]; US (UsOnly)
HANG, Kenneth, Warren[US/US]; US (UsOnly)
WANG, Yueli[US/US]; US (UsOnly)
KONNO, Takuya[JP/JP]; JP (UsOnly)
E. I. du Pont de Nemours and Company[US/US]; 1007 Market Street Wilmington, Delaware 19898, US (AllExceptUS)
Inventors: LAUGHLIN, Brian, J.; US
CARROLL, Alan, Frederick; US
HANG, Kenneth, Warren; US
WANG, Yueli; US
KONNO, Takuya; JP
Agent: CARTY, Sherry; E. I. du Pont de Nemours and Company Legal Patent Records Center 4417 Lancaster Pike Wilmington, Delaware 19805, US
Priority Data:
61/167,89209.04.2009US
Title (EN) GLASS COMPOSITIONS USED IN CONDUCTORS FOR PHOTOVOLTAIC CELLS
(FR) COMPOSITIONS DE VERRE UTILISÉES DANS DES CONDUCTEURS POUR DES CELLULES PHOTOVOLTAÏQUES
Abstract:
(EN) The invention relates to glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells. The glass comprises: 8-26 wt% SiO2; 0-9 wt% B2O3; 0-17 wt% F; 47-75 wt% Bi.
(FR) L'invention porte sur des compositions de verre utiles dans des pâtes conductrices pour des dispositifs semi-conducteurs de silicium et des cellules photovoltaïques. Le verre comprend : 8-26 % en poids de SiO2; 0-9 % en poids de B2O3; 0-17 % en poids de F; 47-75 % en poids de Bi.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)