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1. (WO2010118090) ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/118090    International Application No.:    PCT/US2010/030177
Publication Date: 14.10.2010 International Filing Date: 07.04.2010
IPC:
H01L 21/337 (2006.01)
Applicants: EFFICIENT POWER CONVERSION CORPORATION [US/US]; 909 N. Sepulveda Boulevard Suite 230 El Segundo, CA 90245 (US) (For All Designated States Except US).
LIDOW, Alexander [US/US]; (US) (For US Only).
BEACH, Robert [US/US]; (US) (For US Only).
NAKATA, Alana [US/US]; (US) (For US Only).
CAO, Jianjun [US/US]; (US) (For US Only).
ZHAO, Guang, Yuan [CN/US]; (US) (For US Only)
Inventors: LIDOW, Alexander; (US).
BEACH, Robert; (US).
NAKATA, Alana; (US).
CAO, Jianjun; (US).
ZHAO, Guang, Yuan; (US)
Agent: SOFFEN, Stephen, A.; Dickstein Shapiro LLP 1825 Eye Street, NW Washington, DC 20006-5403 (US)
Priority Data:
61/167,788 08.04.2009 US
Title (EN) ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
(FR) TRANSISTOR AU NITRURE DE GALLIUM À MODE D'ENRICHISSEMENT À CARACTÉRISTIQUES DE GRILLE AMÉLIORÉES
Abstract: front page image
(EN)An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400Å to 900Å. In a preferred embodiment, the thickness is 600Å.
(FR)L'invention porte sur un transistor au GaN à mode d'enrichissement comprenant une structure pGaN de grille ayant une épaisseur qui évite une défaillance diélectrique. Dans un mode de réalisation, cette épaisseur est dans la plage de 400 Å à 900 Å. Dans un mode de réalisation préféré, l'épaisseur est de 600 Å.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)