WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010117964) METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/117964    International Application No.:    PCT/US2010/030008
Publication Date: 14.10.2010 International Filing Date: 05.04.2010
IPC:
H01L 21/3065 (2006.01), H05H 1/34 (2006.01)
Applicants: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway Fremont, California 94538 (US) (For All Designated States Except US).
JI, Bing [US/US]; (US) (For US Only).
TAKESHITA, Kenji [JP/US]; (US) (For US Only).
BAILEY, Andrew D., III [US/US]; (US) (For US Only).
HUDSON, Eric A. [US/US]; (US) (For US Only).
MORAVEJ, Maryam [US/US]; (US) (For US Only).
SIRARD, Stephen M. [US/US]; (US) (For US Only).
KO, Jungmin [KR/US]; (US) (For US Only).
LE, Daniel [US/US]; (US) (For US Only).
HEFTY, Robert C. [US/US]; (US) (For US Only).
CHENG, Yu [CN/US]; (US) (For US Only).
DELGADINO, Gerardo A. [US/US]; (US) (For US Only).
YEN, Bi-Ming [--/US]; (US) (For US Only)
Inventors: JI, Bing; (US).
TAKESHITA, Kenji; (US).
BAILEY, Andrew D., III; (US).
HUDSON, Eric A.; (US).
MORAVEJ, Maryam; (US).
SIRARD, Stephen M.; (US).
KO, Jungmin; (US).
LE, Daniel; (US).
HEFTY, Robert C.; (US).
CHENG, Yu; (US).
DELGADINO, Gerardo A.; (US).
YEN, Bi-Ming; (US)
Agent: LEE, Michael, B.,K., Lee; Beyer Law Group LLP P.O. Box 1687 Cupertino, California 95015-1687 (US)
Priority Data:
61/168,115 09.04.2009 US
Title (EN) METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE
(FR) PROCÉDÉ DE GRAVURE DE DIÉLECTRIQUE À CONSTANTE K BASSE PERMETTANT DE RÉDUIRE LES ENDOMMAGEMENTS
Abstract: front page image
(EN)A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.
(FR)L'invention concerne, dans un mode de réalisation, un procédé de gravure de caractéristiques dans une couche de diélectrique à constante K basse déposée sous un masque organique. Le procédé consiste à graver des caractéristiques dans la couche de diélectrique à constante K basse à travers le masque organique, à déposer une couche de fluorocarbure sur la couche de diélectrique à constante K basse, à durcir la couche de fluorocarbure et à retirer le masque organique.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)