WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010117884) TRANSISTOR GATE DRIVER FOR SHORT CIRCUIT PROTECTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/117884    International Application No.:    PCT/US2010/029701
Publication Date: 14.10.2010 International Filing Date: 01.04.2010
IPC:
G11C 11/24 (2006.01)
Applicants: MARVELL WORLD TRADE LTD [BB/BB]; L'Horizon, Gunsite Road Brittons Hill St. Michael 14027 (BB) (For All Designated States Except US).
PITIGOI-ARON, Radu [US/US]; (US) (For US Only).
ZHANG, Wanfeng [CA/US]; (US) (For US Only)
Inventors: PITIGOI-ARON, Radu; (US).
ZHANG, Wanfeng; (US)
Agent: YOUNG, Brian N.; 900 Lafayette St., Ste. 301 Santa Clara, California 95050 (US)
Priority Data:
61/167,479 07.04.2009 US
Title (EN) TRANSISTOR GATE DRIVER FOR SHORT CIRCUIT PROTECTION
(FR) COMMANDE DE GÂCHETTE DE TRANSISTOR POUR PROTECTION CONTRE LES COURTS-CIRCUITS
Abstract: front page image
(EN)Particular embodiments generally relate to driver structures. In one embodiment, an apparatus includes a first driver that drives a first current for a transistor. The first driver drives the first current during a first portion of a drive time of driving the transistor. The first driver is OFF during a second portion. A second driver drives a second current for the transistor during the second portion.
(FR)Des modes de réalisation particuliers de l'invention concernent généralement des structures de commande. Dans un mode de réalisation, un appareil selon l'invention comprend une première commande qui commande un premier courant pour un transistor. La première commande commande le premier courant pendant une première partie d'un temps de commande pour la commande du transistor. La première commande est inactive pendant une seconde partie. Une seconde commande commande un second courant pour le transistor pendant la seconde partie.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)