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1. (WO2010117697) MONOLITHIC INTEGRATION OF PHOTOVOLTAIC CELLS
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/117697 International Application No.: PCT/US2010/028985
Publication Date: 14.10.2010 International Filing Date: 29.03.2010
IPC:
H01L 31/042 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
Applicants:
STRAND, David [US/US]; US (UsOnly)
OVSHINSKY, Stanford [US/US]; US (UsOnly)
OVSHINSKY INNOVATION, LLC [US/US]; 1050 E. Square Lake Road Bloomfield Hills, MI 48304, US (AllExceptUS)
Inventors:
STRAND, David; US
OVSHINSKY, Stanford; US
Agent:
BRAY, Kevin; Ovshinsky Innovation, LLC 1050 E. Square Lake Road Bloomfield Hills, MI 48304, US
Priority Data:
12/414,68931.03.2009US
Title (EN) MONOLITHIC INTEGRATION OF PHOTOVOLTAIC CELLS
(FR) INTÉGRATION MONOLITHIQUE DE CELLULES PHOTOVOLTAÏQUES
Abstract:
(EN) A method that includes forming a photovoltaic material on a substrate and removing the substrate. The method may include patterning the photovoltaic material to form a plurality of photovoltaic devices and configuring the devices in series to achieve monolithic integration. The method may include forming additional layers on the substrate, such as one or more of a protective material, a transparent conductor, a back conductor, an adhesive layer, and a laminate support layer. When the substrate is opaque, the method provides the option of ordering the layers so that a transparent conductor is formed before the back reflector of a photovoltaic stack. This ordering of layers facilitates monolithic integration and the ability to remove the substrate allows the earlier-formed transparent conductor to serve as the point of incidence for receiving the light that excites the photovoltaic material.
(FR) L'invention porte sur un procédé qui comprend la formation d'un matériau photovoltaïque sur un substrat et le retrait du substrat. Le procédé peut comprendre le façonnage du matériau photovoltaïque pour former une pluralité de dispositifs photovoltaïques et la configuration des dispositifs en série pour obtenir une intégration monolithique. Le procédé peut comprendre la formation de couches additionnelles sur le substrat, telles qu'un ou plusieurs parmi un matériau protecteur, un conducteur transparent, un conducteur arrière, une couche adhésive et une couche de support stratifiée. Lorsque le substrat est opaque, le procédé prévoit l'option d'ordonner les couches de telle sorte qu'un conducteur transparent est formé avant le réflecteur arrière d'un empilement photovoltaïque. Cette mise en ordre des couches facilite l'intégration monolithique et la capacité à retirer le substrat permet au conducteur transparent formé précédemment de servir de point d'incidence pour recevoir la lumière qui excite le matériau photovoltaïque.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)