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1. (WO2010117551) METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/117551    International Application No.:    PCT/US2010/027127
Publication Date: 14.10.2010 International Filing Date: 12.03.2010
IPC:
H01J 37/08 (2006.01), H01J 37/317 (2006.01)
Applicants: TEL EPION INC. [US/US]; 37 Manning Road Billerica, MA 01821 (US) (For All Designated States Except US).
HAUTALA, John, J. [US/US]; (US) (For US Only).
BAXTER, Nathan, E. [US/US]; (US) (For US Only)
Inventors: HAUTALA, John, J.; (US).
BAXTER, Nathan, E.; (US)
Agent: DAVIDSON, Kristi, L.; Wood, Herron & Evans, LLP 2700 Carew Tower 441 Vine Street Cincinnati, OH 45202-2917 (US)
Priority Data:
12/415,755 31.03.2009 US
Title (EN) METHOD FOR MODIFYING A MATERIAL LAYER USING GAS CLUSTER ION BEAM PROCESSING
(FR) PROCÉDÉ POUR MODIFIER UNE COUCHE DE MATÉRIAU EN UTILISANT UN TRAITEMENT PAR FAISCEAU D'IONS À AMAS GAZEUX
Abstract: front page image
(EN)A method of method of modifying a material layer on a substrate (152, 252) is described. The method comprises forming the material layer on the substrate (152, 252). Thereafter, the method comprises establishing a gas cluster ion beam (GCIB) (128) having an energy per atom ratio ranging from about 0.25 eV per atom to about 100 eV per atom, and modifying the material layer by exposing the material layer to the GCIB (128).
(FR)L'invention concerne un procédé de modification d'une couche de matériau sur un substrat (152, 252). Le procédé comprend la formation de la couche de matériau sur le substrat (152, 252). Ensuite, le procédé comprend l'établissement d'un faisceau d'ions à amas gazeux (GCIB) (128) ayant un rapport d'énergie par atome allant d'environ 0,25 eV par atome à environ 100 eV par atome, et la modification de la couche de matériau en exposant la couche de matériau au GCIB (128).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)