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1. (WO2010117088) PATTERN FORMATION METHOD, PATTERN, AND DEVICE

Pub. No.:    WO/2010/117088    International Application No.:    PCT/JP2010/056795
Publication Date: Fri Oct 15 01:59:59 CEST 2010 International Filing Date: Sat Apr 10 01:59:59 CEST 2010
IPC: H01L 21/208
B29C 59/02
C01B 33/02
C01B 33/027
Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY
独立行政法人科学技術振興機構
SHIMODA, Tatsuya
下田 達也
MATSUKI, Yasuo
松木 安生
KAWAJIRI, Ryo
川尻 陵
MASUDA, Takashi
増田 貴史
KANEDA, Toshihiko
金田 敏彦
Inventors: SHIMODA, Tatsuya
下田 達也
MATSUKI, Yasuo
松木 安生
KAWAJIRI, Ryo
川尻 陵
MASUDA, Takashi
増田 貴史
KANEDA, Toshihiko
金田 敏彦
Title: PATTERN FORMATION METHOD, PATTERN, AND DEVICE
Abstract:
Disclosed is a pattern formation method comprising: a first step of arranging at least one silane compound selected from the group consisting of silicon hydride compounds and silicon halide compounds in a gap formed between a substrate and a pattern-shaped mold; and a second step of applying at least one treatment selected from a heat treatment and an ultraviolet ray radiation treatment to the arranged silane compound. When the second step is carried out under an inert atmosphere or a reductive atmosphere, a pattern comprising silicon can be formed. When at least a part of the second step is carried out under an oxygen-containing atmosphere, a pattern comprising a silicon oxide can be formed.