Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2010116981) INDIUM OXIDE-BASED ELECTRICALLY CONDUCTIVE TRANSPARENT FILM, AND PROCESS FOR PRODUCTION THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/116981 International Application No.: PCT/JP2010/056195
Publication Date: 14.10.2010 International Filing Date: 06.04.2010
IPC:
C23C 14/08 (2006.01) ,C23C 14/34 (2006.01) ,H01B 5/14 (2006.01) ,H01B 13/00 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13
Apparatus or processes specially adapted for manufacturing conductors or cables
Applicants:
高橋 誠一郎 TAKAHASHI Seiichiro [JP/JP]; JP (UsOnly)
宮下 徳彦 MIYASHITA Norihiko [JP/JP]; JP (UsOnly)
池田 真 IKEDA Makoto [JP/JP]; JP (UsOnly)
三井金属鉱業株式会社 MITSUI MINING & SMELTING CO., LTD. [JP/JP]; 東京都品川区大崎一丁目11番1号 1-11-1, Osaki, Shinagawa-ku, Tokyo 1418584, JP (AllExceptUS)
Inventors:
高橋 誠一郎 TAKAHASHI Seiichiro; JP
宮下 徳彦 MIYASHITA Norihiko; JP
池田 真 IKEDA Makoto; JP
Agent:
栗原浩之 KURIHARA Hiroyuki; 東京都渋谷区広尾1丁目3番15号 岩崎ビル6階 栗原国際特許事務所 Kurihara International Patent Office, Iwasaki Bldg. 6F, 3-15, Hiroo 1-chome, Shibuya-ku, Tokyo 1500012, JP
Priority Data:
2009-09444408.04.2009JP
Title (EN) INDIUM OXIDE-BASED ELECTRICALLY CONDUCTIVE TRANSPARENT FILM, AND PROCESS FOR PRODUCTION THEREOF
(FR) FILM TRANSPARENT ÉLECTRIQUEMENT CONDUCTEUR À BASE D'OXYDE D'INDIUM ET PROCÉDÉ POUR SA PRODUCTION
(JA) 酸化インジウム系透明導電膜及びその製造方法
Abstract:
(EN) Disclosed is an electrically conductive transparent film which can be produced in the form of an amorphous film that can be patterned easily by weak acid etching and can be crystallized easily, wherein the crystallized film has a low resistivity and a high transmissivity. The film is produced in the form of an amorphous film using a sputtering target that comprises a sintered oxide material comprising indium oxide and optionally tin, and additionally comprising at least one additive element selected from the group consisting of Sr, Li, La, Ca, Mg and Y, under conditions where the partial pressure of water is 1.0 × 10-4 to 1.0 × 10-1 Pa inclusive.
(FR) L'invention concerne un film transparent électriquement conducteur qui peut être produit sous la forme d'un film amorphe sur lequel un motif peut aisément être formé par gravure à l'acide faible et capable de cristalliser aisément, le film cristallisé présentant une basse résistivité et une haute transmittivité. Le film est produit sous la forme d'un film amorphe en utilisant une cible de pulvérisation qui contient un matériau d'oxyde fritté qui comprend de l'oxyde d'indium et facultativement de l'étain et qui comprend en supplément au moins un élément d'addition sélectionné dans l'ensemble constitué de Sr, Li, La, Ca, Mg et Y, dans des conditions dans lesquelles la pression partielle d'eau est de 1,0 × 10-4 à 1,0 × 10-1 Pa inclus.
(JA)  アモルファス膜として成膜でき、そのアモルファス膜は弱酸エッチングにより容易にパターニングでき、さらに容易に結晶化でき、またさらに結晶化した膜は低抵抗で且つ透過率が高い透明導電膜を提供する。 酸化インジウムと必要に応じて錫を含有すると共にSr、Li、La、Ca、Mg及びYからなる群から選択される少なくとも一種である添加元素を含有する酸化物焼結体を具備するスパッタリングターゲットを用い、水の分圧が1.0×10-4Pa以上1.0×10-1Pa以下の条件下でアモルファス膜として成膜されたものである。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)