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Pub. No.:    WO/2010/116904    International Application No.:    PCT/JP2010/055432
Publication Date: 14.10.2010 International Filing Date: 26.03.2010
H04N 5/335 (2011.01), H04N 5/365 (2011.01), H04N 5/369 (2011.01), H04N 5/374 (2011.01)
Applicants: HAMAMATSU PHOTONICS K.K. [JP/JP]; 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 4358558 (JP) (For All Designated States Except US).
JOBOJI Tasuku [JP/JP]; (JP) (For US Only).
SUGIYAMA Yukinobu [JP/JP]; (JP) (For US Only).
TOYODA Haruyoshi [JP/JP]; (JP) (For US Only).
TAKUMI Munenori [JP/JP]; (JP) (For US Only)
Inventors: JOBOJI Tasuku; (JP).
SUGIYAMA Yukinobu; (JP).
TOYODA Haruyoshi; (JP).
TAKUMI Munenori; (JP)
Agent: HASEGAWA Yoshiki; SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA (Meiji Yasuda Life Bldg.) 9th fl., 1-1, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1000005 (JP)
Priority Data:
2009-093065 07.04.2009 JP
(JA) 固体撮像装置
Abstract: front page image
(EN)A solid-state imaging device (1) in which pixel sections (P(x, y)) provided with photoelectric conversion elements and pixel section amplifiers are two-dimensionally arrayed comprises at least one row of optical black sections (Pob(x, y)) which are provided with the same photoelectric conversion elements and pixel section amplifiers as the pixel sections (P(x, y)) and are provided with light-shielding films which coat the photoelectric conversion elements, and at least one row of optical gray sections (Pog(x, y)) provided with the pixel section amplifiers which are the same as the pixel sections (P(x, y)) and to which a reference voltage is inputted, wherein the value of the reference voltage is smaller than the value of the output signal of the photoelectric conversion elements in a saturated state.
(FR)Un dispositif de formation d'image à semi-conducteur (1) dans lequel des sections de pixels (P(x, y)) comprenant des éléments de conversion photoélectrique et des amplificateurs de sections de pixels sont agencés de manière bidimensionnelle comprend au moins une rangée de sections de noir optique (Pob(x, y)) qui comprennent les mêmes éléments de conversion photoélectrique et les mêmes amplificateurs de section de pixels que les sections de pixels (P(x, y)) et qui comprennent des films opaques à la lumière revêtant les éléments de conversion photoélectrique, et au moins une rangée de sections de gris optique (Pog(x, y)) comprenant les amplificateurs de sections de pixels qui sont identiques aux sections de pixels (P(x, y)) et auxquelles une tension de référence est fournie en entrée, la valeur de la tension de référence étant inférieure à la valeur du signal de sortie des éléments de conversion photoélectrique à l'état saturé.
(JA) 本発明の一実施形態に係る固体撮像装置1は、光電変換素子と画素部用増幅部とを有する画素部P(x、y)が2次元配列された固体撮像装置において、画素部P(x、y)と同一の光電変換素子と画素部用増幅部とを有すると共に、当該光電変換素子を被覆する遮光膜を有するオプティカルブラック部Pob(x、y)であって、少なくとも1行の当該オプティカルブラック部Pob(x、y)と、画素部P(x、y)と同一の画素部用増幅部であって、基準電圧が入力される当該画素部用増幅部を有するオプティカルグレイ部Pog(x、y)であって、少なくとも1行の当該オプティカルグレイ部Pog(x、y)とを備え、基準電圧の値は、飽和状態における前記光電変換素子の出力信号の値より小さい。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)