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1. (WO2010116615) METHOD OF PRODUCING SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE

Pub. No.:    WO/2010/116615    International Application No.:    PCT/JP2010/001810
Publication Date: Fri Oct 15 01:59:59 CEST 2010 International Filing Date: Tue Mar 16 00:59:59 CET 2010
IPC: H01L 23/50
H01L 23/12
Applicants: TOPPAN PRINTING CO., LTD.
凸版印刷株式会社
MANIWA, Susumu
馬庭進
TSUKAMOTO, Takehito
塚本健人
TODA, Junko
戸田順子
Inventors: MANIWA, Susumu
馬庭進
TSUKAMOTO, Takehito
塚本健人
TODA, Junko
戸田順子
Title: METHOD OF PRODUCING SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR DEVICE
Abstract:
A method of producing a substrate for a semiconductor element, comprising a first step which includes forming a first photosensitive resin layer on a first surface of a metal sheet, placing a second photosensitive resin layer on a second surface of the metal sheet, forming on the first surface a first resist pattern used for forming connection posts, and forming on the second surface a second resist pattern used for forming an interconnect pattern; and a second step which includes forming the connection posts on the first surface, filling a liquid resin used for pre-molding on the first surface, curing the liquid resin used for pre-molding to form a pre-mold resin layer, polishing the first surface to expose the top base surface of the connection posts from the pre-mold resin layer, and forming the interconnect pattern on the second surface; wherein by proceeding through the first step and the second step, a trench structure can be formed around the pattern of the substrate body, said trench structure having a depth that extends midway into the thickness direction of the metal sheet.