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1. (WO2010116575) SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2010/116575    International Application No.:    PCT/JP2010/000043
Publication Date: Fri Oct 15 01:59:59 CEST 2010 International Filing Date: Thu Jan 07 00:59:59 CET 2010
IPC: H01L 29/78
H01L 21/28
H01L 21/336
H01L 29/12
H01L 29/41
H01L 29/739
Applicants: KABUSHIKI KAISHA TOSHIBA
株式会社 東芝
KONO, Hiroshi
河野洋志
SHINOHE, Takashi
四戸孝
MIZUKAMI, Makoto
水上誠
Inventors: KONO, Hiroshi
河野洋志
SHINOHE, Takashi
四戸孝
MIZUKAMI, Makoto
水上誠
Title: SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Abstract:
A semiconductor device using SiC, which can be more miniaturized, has ultra-low on-resistance and excellent reliability, and a method of producing the semiconductor device. The semiconductor device comprises: a silicon carbide substrate; a first silicon carbide layer of a first conductivity type provided on a first main surface of the silicon carbide substrate; first silicon carbide regions of a second conductivity type provided on the surface of the first silicon carbide layer; second silicon carbide regions of the first conductivity type provided on the surface of the first silicon carbide regions; third silicon carbide regions of the second conductivity type provided on the lower part of the second silicon carbide regions; trenches which penetrate the second silicon carbide regions and reach the third silicon carbide regions; gate insulating films; gate electrodes; interlayer insulating films covering the gate electrodes; first electrodes which are formed on the second silicon carbide regions of the trench side surfaces and on the interlayer insulating films and which contain a metal element selected from a group comprising Ni, Ti, Ta, Mo, and W; second electrodes which are formed on the third silicon carbide regions of the bottom part of the trenches and on the first electrodes and which contain Al; a first main electrode provided on the second electrodes; and a second main electrode formed on a second main surface of the silicon carbide substrate.