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Machine translation
1. (WO2010115137) LATERAL DIODE AND METHOD OF MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/115137    International Application No.:    PCT/US2010/029830
Publication Date: 07.10.2010 International Filing Date: 02.04.2010
IPC:
H01L 21/329 (2006.01), H01L 29/861 (2006.01), H01L 29/06 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; Attn: International IP Administration 5775 Morehouse Drive San Diego, CA 92121 (US) (For All Designated States Except US).
JALILIZEINALI, Reza [US/US]; (US) (For US Only).
WORLEY, Eugene, R. [US/US]; (US) (For US Only).
SIANSURI, Evan [IN/US]; (US) (For US Only).
DUNDIGAL, Sreeker, R. [IN/US]; (US) (For US Only)
Inventors: JALILIZEINALI, Reza; (US).
WORLEY, Eugene, R.; (US).
SIANSURI, Evan; (US).
DUNDIGAL, Sreeker, R.; (US)
Agent: TALPALATSKY, Sam; 5775 Morehouse Drive San Diego, CA 92121 (US)
Priority Data:
12/751,903 31.03.2010 US
61/166,207 02.04.2009 US
Title (EN) LATERAL DIODE AND METHOD OF MANUFACTURING THE SAME
(FR) DIODE LATÉRALE ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)An active diode with fast turn-on time, low capacitance, and low turn-on resistance may be manufactured without a gate and without a shallow trench isolation region between doped regions of the diode. A short conduction path in the active diode allows a fast turn-on time, and a lack of gate oxide reduces susceptibility of the active diode to extreme voltages. The active diode may be implemented in integrated circuits to prevent and reduce damage from electrostatic discharge (ESD) events. Manufacturing the active diode is accomplished by depositing a salicide block between doped regions of the diode before salicidation. After the salicide layers are formed on the doped regions, the salicide block is removed.
(FR)La diode active selon l'invention à temps de commutation rapide, faible capacité, et faible résistance de commutation peut être fabriquée sans gâchette et sans zone d'isolation de tranchée peu profonde entre les zones dopées de la diode. Un chemin de conduction court dans la diode active permet un temps de commutation rapide et l'absence d'oxyde de gâchette réduit la sensibilité de la diode active aux tensions extrêmes. La diode active peut être implémentée dans des circuits intégrés pour prévenir et réduire les dommages causés par les événements de décharges électrostatiques (ESD). La fabrication de la diode active est accomplie en déposant un bloc salicide entre les zones dopées de la diode avant salicidation. Après que les couches salicides soient formées sur les zones dopées, le bloc salicide est retiré.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)