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1. (WO2010114831) WRITING A MULTIBIT RESISTANCE-SWITCHING MEMORY CELL INCLUDING A DUMMY RESISTANCE, RESISTANCE SWITCHING ELEMENTS AND DIODES

Pub. No.:    WO/2010/114831    International Application No.:    PCT/US2010/029189
Publication Date: Fri Oct 08 01:59:59 CEST 2010 International Filing Date: Wed Mar 31 01:59:59 CEST 2010
IPC: G11C 11/56
G11C 13/00
Applicants: SANDISK 3D LLC
SCHEUERLEIN, Roy, E.
Inventors: SCHEUERLEIN, Roy, E.
Title: WRITING A MULTIBIT RESISTANCE-SWITCHING MEMORY CELL INCLUDING A DUMMY RESISTANCE, RESISTANCE SWITCHING ELEMENTS AND DIODES
Abstract:
A non-volatile storage apparatus comprises a set of Y lines, a set of X lines and a plurality of memory cells in communication with the set of X lines and the set of Y lines. Each memory cell of the plurality of memory cells includes a resistance element in a static resistance condition and two or more reversible resistance-switching elements and a pluralilty of diodes. The resistance element in the static resistance condition and the two or more reversible resistance-switching elements are connected to a corresponding Y line of the set of Y lines and to a corresponding diode and the diodes are connected to a common X line of the set of X lines. One or multiple bits of data are programmed into a particular memory cell of the plurality of memory cells by causing current flow between Y lines connected to the particular memory cell.