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1. (WO2010114600) ALL-ELECTRON BATTERY HAVING AREA-ENHANCED ELECTRODES
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/114600 International Application No.: PCT/US2010/000953
Publication Date: 07.10.2010 International Filing Date: 29.03.2010
IPC:
H01L 21/02 (2006.01) ,H01L 29/92 (2006.01) ,H01L 29/06 (2006.01) ,H01L 29/12 (2006.01) ,H01G 9/058 (2006.01) ,H01L 21/8242 (2006.01) ,H01G 4/33 (2006.01) ,H01G 9/048 (2006.01) ,H01G 9/055 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9
Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004
Details
04
Electrodes
058
specially adapted for double-layer capacitors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8242
Dynamic random access memory structures (DRAM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
33
Thin- or thick-film capacitors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9
Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004
Details
04
Electrodes
048
characterised by their structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9
Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
004
Details
04
Electrodes
048
characterised by their structure
055
Etched foil electrodes
Applicants: HOLME, Timothy, P.[US/US]; US (UsOnly)
PRINZ, Friedrich, B.[AT/US]; US (UsOnly)
USUI, Takane[JP/US]; US (UsOnly)
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY[US/US]; 1705 El Camino Real Palo Alto, CA 94306-1106, US (AllExceptUS)
Inventors: HOLME, Timothy, P.; US
PRINZ, Friedrich, B.; US
USUI, Takane; US
Agent: JACOBS, Ron; 350 Cambridge Avenue, Suite 100 Palo Alto, CA 94306, US
Priority Data:
61/211,74501.04.2009US
61/211,74601.04.2009US
61/274,86620.08.2009US
Title (EN) ALL-ELECTRON BATTERY HAVING AREA-ENHANCED ELECTRODES
(FR) BATTERIE TOUT ÉLECTRONIQUE COMPRENANT DES ÉLECTRODES À AIRE AUGMENTÉE
Abstract:
(EN) Improved energy storage is provided by exploiting two physical effects in combination. The first effect can be referred to as the All-Electron Battery (AEB) effect, and relates to the use of inclusions embedded in a dielectric structure between two electrodes of a capacitor. Electrons can tunnel through the dielectric between the electrodes and the inclusions, thereby increasing the charge storage density relative to a conventional capacitor. The second effect can be referred to as an area enhancement effect, and relates to the use of micro-structuring or nano- structuring on one or both of the electrodes to provide an enhanced interface area relative to the electrode geometrical area. Area enhancement is advantageous for reducing the self-discharge rate of the device.
(FR) L'invention porte sur un stockage d'énergie amélioré exploitant deux effets physiques en combinaison. Le premier effet peut être appelé effet de batterie tout électronique (AEB), et concerne l'utilisation d'inclusions incorporées dans une structure diélectrique entre deux électrodes d'un condensateur. Des électrons peuvent passer par effet tunnel à travers le diélectrique entre les électrodes et les inclusions, ce qui augmente ainsi la densité de stockage de charges par rapport à un condensateur classique. Le second effet peut être appelé effet d'amélioration d'aire, et concerne l'utilisation d'une microstructuration ou d'une nanostructuration sur l'une des électrodes ou les deux afin d'obtenir une aire d'interface augmentée par rapport à l'aire géométrique des électrodes. Une amélioration de l'aire est avantageuse pour réduire la vitesse d'autodécharge du dispositif.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)