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1. (WO2010113779) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2010/113779    International Application No.:    PCT/JP2010/055321
Publication Date: Fri Oct 08 01:59:59 CEST 2010 International Filing Date: Sat Mar 27 00:59:59 CET 2010
IPC: H01L 21/338
H01L 21/768
H01L 21/822
H01L 21/8232
H01L 23/522
H01L 27/04
H01L 27/06
H01L 29/417
H01L 29/423
H01L 29/49
H01L 29/778
H01L 29/812
Applicants: NEC CORPORATION
日本電気株式会社
MATSUNAGA Koji
松永 高治
Inventors: MATSUNAGA Koji
松永 高治
Title: SEMICONDUCTOR DEVICE
Abstract:
The both ends of each of the gate fingers are connected to the same gate bus bar. The both ends of each of a plurality of source electrodes are grounded. The source electrodes and a plurality of drain electrodes are alternately disposed one by one, and another gate fingers are disposed between the source electrodes and the drain electrodes. The drain electrodes are connected by means of an air bridge provided over the source electrode and the two gate fingers sandwiched between the drain electrodes. A ladder circuit is connected to the gate bus bar in parallel to the gate fingers, and loop oscillation conditions are adjusted.