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1. (WO2010113685) SUPPORTING SUBSTRATE, BONDING SUBSTRATE, METHOD FOR MANUFACTURING SUPPORTING SUBSTRATE, AND METHOD FOR MANUFACTURING BONDING SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/113685    International Application No.:    PCT/JP2010/054859
Publication Date: 07.10.2010 International Filing Date: 19.03.2010
IPC:
C30B 29/06 (2006.01), C30B 29/36 (2006.01)
Applicants: BRIDGESTONE CORPORATION [JP/JP]; 10-1, Kyobashi 1-chome, Chuo-ku, Tokyo 1048340 (JP) (For All Designated States Except US).
USHITA, Kazuhiro; (For US Only)
Inventors: USHITA, Kazuhiro;
Agent: MIYOSHI, Hidekazu; Toranomon Kotohira Tower, 2-8, Toranomon 1-chome, Minato-ku, Tokyo 1050001 (JP)
Priority Data:
2009-085294 31.03.2009 JP
Title (EN) SUPPORTING SUBSTRATE, BONDING SUBSTRATE, METHOD FOR MANUFACTURING SUPPORTING SUBSTRATE, AND METHOD FOR MANUFACTURING BONDING SUBSTRATE
(FR) SUBSTRAT DE SUPPORT, SUBSTRAT DE LIAISON, PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE SUPPORT ET PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE LIAISON
(JA) 支持基板、貼り合わせ基板、支持基板の製造方法、及び貼り合わせ基板の製造方法
Abstract: front page image
(EN)Provided is a supporting substrate (30) to be bonded on a single crystal wafer composed of a single crystal body. The supporting substrate is provided with a silicon carbide polycrystal substrate (10) composed of a silicon carbide polycrystal body, and a coat layer (20) deposited on the silicon carbide polycrystal substrate (10). The coat layer (20) is composed of silicon carbide or silicon and is in contact with the single crystal wafer, and the arithmetic average roughness of the contact surface (22) of the coat layer (20) in contact with the single crystal wafer is 1 nm or less.
(FR)La présente invention se rapporte à un substrat de support (30) qui doit être lié sur une plaquette monocristalline composée d'un corps monocristallin. Le substrat de support est pourvu d'un substrat polycristallin de carbure de silicium (10) composé d'un corps polycristallin de carbure de silicium, et d'une couche de revêtement (20) déposée sur le substrat polycristallin de carbure de silicium (10). La couche de revêtement (20) est composée de carbure de silicium ou de silicium et est en contact avec la plaquette monocristalline, et la rugosité moyenne arithmétique de la surface de contact (22) de la couche de revêtement (20) en contact avec la plaquette monocristalline est inférieure ou égale à 1 nm.
(JA) 単結晶体からなる単結晶ウェハに貼り合わせられる支持基板30であって、炭化珪素の多結晶体からなる炭化珪素多結晶基板10と、炭化珪素多結晶基板10に蒸着されるコート層20とを備え、コート層20は、炭化珪素又は珪素からなり、単結晶ウェハと接触し、単結晶ウェハと接触するコート層20の接触面22の算術平均粗さは、1nm以下である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)