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1. (WO2010113634) IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/113634    International Application No.:    PCT/JP2010/054468
Publication Date: 07.10.2010 International Filing Date: 10.03.2010
IPC:
H01L 27/14 (2006.01), H04N 5/335 (2011.01), H04N 5/369 (2011.01), H04N 5/372 (2011.01), H04N 5/374 (2011.01)
Applicants: CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501 (JP) (For All Designated States Except US).
KISHI, Takafumi [JP/JP]; (JP) (For US Only)
Inventors: KISHI, Takafumi; (JP)
Agent: OHTSUKA, Yasunori; 7th FL., KIOICHO PARK BLDG., 3-6, KIOICHO, CHIYODA-KU, Tokyo 1020094 (JP)
Priority Data:
2009-090485 02.04.2009 JP
Title (EN) IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
(FR) CAPTEUR D'IMAGE ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)An image sensor includes: a photoelectric conversion pixel having a photoelectric conversion element that performs photoelectric conversion, and a light guide formed of a first material in an interlayer insulation film above the photoelectric conversion element; and a light-shielded pixel having a photoelectric conversion element that performs photoelectric conversion, a light guide formed of a second material that is different from the first material in an interlayer insulation film above the photoelectric conversion element, and a light-shielding layer formed above the light guide.
(FR)L'invention porte sur un capteur d'image qui comprend : un pixel de conversion photoélectrique ayant un élément de conversion photoélectrique qui effectue une conversion photoélectrique, et un guide de lumière formé d'un premier matériau dans un film d'isolation intercouche au-dessus de l'élément de conversion photoélectrique ; et un pixel protégé de la lumière ayant un élément de conversion photoélectrique qui effectue une conversion photoélectrique, un guide de lumière formé d'un second matériau qui est différent du premier matériau dans un film d'isolation intercouche au-dessus de l'élément de conversion photoélectrique, et une couche de protection vis-à-vis de la lumière formée au-dessus du guide de lumière.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)