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Machine translation
1. (WO2010113518) FIELD-EFFECT TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/113518 International Application No.: PCT/JP2010/002412
Publication Date: 07.10.2010 International Filing Date: 01.04.2010
Chapter 2 Demand Filed: 15.09.2010
IPC:
H01L 29/78 (2006.01) ,H01L 21/205 (2006.01) ,H01L 21/336 (2006.01) ,H01L 21/8238 (2006.01) ,H01L 27/092 (2006.01) ,H01L 29/161 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/30 (2006.01) ,H01L 51/40 (2006.01)
Applicants: SANO, Eiichi; null (UsOnly)
OTSUJI, Taiichi; null (UsOnly)
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY[JP/JP]; Kita 8-jyo Nishi 5-chome, Kita-ku, Sapporo-shi, Hokkaido 0600808, JP (AllExceptUS)
TOHOKU UNIVERSITY[JP/JP]; 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577, JP (AllExceptUS)
Inventors: SANO, Eiichi; null
OTSUJI, Taiichi; null
Agent: WASHIDA, Kimihito; 8th Floor, Shinjuku First West Bldg., 1-23-7, Nishi-Shinjuku, Shinjuku-ku, Tokyo 1600023, JP
Priority Data:
2009-08935301.04.2009JP
Title (EN) FIELD-EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP
(JA) 電界効果トランジスタ
Abstract: front page image
(EN) The disclosed field-effect transistor has a graphene channel, and does not exhibit ambipolar properties. Specifically, the field-effect transistor has a semi-conducting substrate; a channel including a graphene layer disposed on the aforementioned semiconductor substrate; a source electrode and drain electrode comprising a metal; and a gate electrode. The aforementioned channel and the aforementioned source and drain electrodes comprising a metal are connected via a semiconductor layer.
(FR) L'invention concerne un transistor à effet de champ ayant un canal de graphène, et ne présente pas de propriétés ambipolaires. En particulier, le transistor à effet de champ comporte un substrat semi-conducteur; un canal comprenant une couche de graphène disposée sur le substrat semi-conducteur susmentionné; une électrode source et une électrode drain comprenant un métal; et une électrode de grille. Le canal susmentionné et les électrodes source et drain susmentionnées comprenant un métal sont raccordés par l'intermédiaire d'une couche semi-conductrice.
(JA)  本発明は、グラフェンチャネルを有する電界効果トランジスタであって、アンバイポーラ特性を示さないトランジスタを提供する。具体的には、半導体基板と、前記半導体基板上に配置されたグラフェン層を含むチャネルと、金属からなるソース電極およびドレイン電極と、ゲート電極とを有する電界効果トランジスタであって、前記チャネルと、前記金属からなるソース電極およびドレイン電極とは、半導体層を介して接続している電界効果トランジスタを提供する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)