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1. (WO2010113475) MASK BLANK AND TRANSFER MASK
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/113475 International Application No.: PCT/JP2010/002300
Publication Date: 07.10.2010 International Filing Date: 30.03.2010
IPC:
G03F 1/46 (2012.01) ,G03F 1/58 (2012.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
38
Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
46
Antireflective coatings
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
54
Absorbers, e.g. opaque materials
58
having two or more different absorber layers, e.g. stacked multilayer absorbers
Applicants: HASHIMOTO, Masahiro[JP/JP]; JP (UsOnly)
IWASHITA, Hiroyuki[JP/JP]; JP (UsOnly)
OKUBO, Yasushi[JP/JP]; JP (UsOnly)
NOZAWA, Osamu[JP/JP]; JP (UsOnly)
HOYA CORPORATION[JP/JP]; 7-5, Naka-Ochiai 2-chome, Shinjuku-ku, Tokyo 1618525, JP (AllExceptUS)
Inventors: HASHIMOTO, Masahiro; JP
IWASHITA, Hiroyuki; JP
OKUBO, Yasushi; JP
NOZAWA, Osamu; JP
Agent: FUJIMURA, Yasuo; Room 834, Winaoyama Bldg., 2-15, Minamiaoyma 2-chome, Minato-ku, Tokyo 1070062, JP
Priority Data:
2009-08509031.03.2009JP
Title (EN) MASK BLANK AND TRANSFER MASK
(FR) ÉBAUCHE DE MASQUE ET MASQUE DE TRANSFERT
(JA) マスクブランクおよび転写用マスク
Abstract:
(EN) Disclosed are a practicable mask blank and a practicable transfer mask both producing an effect of adequately improving the problem of the electromagnetic field (EMF) effect which will be a problem for the generation in which the DRAM half pitch (hp) of the semiconductor design rule is 32 nm and the later generations. The mask blank used for fabricating a transfer mask to which ArF exposure light is applied is characterized in that: the mask blank is provided with a light-shielding film (10) having a multilayer structure composed of a light-shielding layer (11) formed on a translucent substrate (1) and a surface antireflection layer (12) and an auxiliary light-shielding film (20) formed over the light-shielding film (10), the thickness of the light-shielding film (10) is 40 nm or less and the optical density is 2.0 or more and 2.7 or less, and the optical density of the multilayer structure of the light-shielding film (10) and the auxiliary light-shielding film (20) is 2.8 or more.
(FR) L’invention concerne une ébauche de masque réalisable et un masque de transfert réalisable, tous deux ayant pour effet d'apporter une solution améliorée appropriée au problème de l'effet de champ électromagnétique (EMF), problème qui se posera pour la génération de semiconducteurs dans laquelle la demi-distance (hp) de la DRAM de la règle de conception des semiconducteurs est de 32 nm et pour les générations suivantes. L'ébauche de masque utilisée pour fabriquer un masque de transfert auquel la lumière d'exposition ArF est appliquée se caractérise en ce que: l'ébauche de masque vient avec un film de protection contre la lumière (10) présentant une structure multicouche composée d'une couche de protection contre la lumière (11) formée sur un substrat translucide (1) et d'une couche superficielle antireflet (12), et un film auxiliaire de protection contre la lumière (20) formé sur le film de protection contre la lumière (10); l'épaisseur du film de protection contre la lumière (10) est d'au plus 40 nm et la densité optique d'au moins 2,0 et d'au plus 2,7; et la densité optique de la structure multicouche du film de protection contre la lumière (10) et du film auxiliaire de protection contre la lumière (20) est d'au moins 2,8.
(JA) [課題]半導体デザインルールにおけるDRAMハーフピッチ(hp)32nm以降の世代で問題となる電磁界(EMF)効果の課題に対し、十分な改善効果を有し、しかも実用性のあるマスクブランク及び転写用マスクを提供する。 [解決手段]ArF露光光が適用される転写用マスクを作製するために用いられるマスクブランクであって、 透光性基板1上に形成される遮光層11および表面反射防止層12の積層構造からなる遮光膜10と、前記遮光膜10の上方に形成される補助遮光膜20とを備え、 前記遮光膜10は、膜厚が40nm以下、かつ光学濃度が2.0以上、2.7以下であり、 前記遮光膜10と補助遮光膜20の積層構造における光学濃度が2.8以上であることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)