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Machine translation
1. (WO2010113402) GAS BARRIER FILM AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/113402    International Application No.:    PCT/JP2010/001898
Publication Date: 07.10.2010 International Filing Date: 17.03.2010
IPC:
B32B 27/00 (2006.01)
Applicants: LINTEC Corporation [JP/JP]; 23-23, Honcho, Itabashi-ku, Tokyo 1730001 (JP) (For All Designated States Except US).
HOSHI, Shinichi [JP/JP]; (JP) (For US Only).
OKUJI, Shigeto [JP/JP]; (JP) (For US Only)
Inventors: HOSHI, Shinichi; (JP).
OKUJI, Shigeto; (JP)
Agent: SHIGA, Masatake; 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620 (JP)
Priority Data:
2009-083871 31.03.2009 JP
Title (EN) GAS BARRIER FILM AND ELECTRONIC DEVICE
(FR) FILM ÉTANCHE AU GAZ ET DISPOSITIF ÉLECTRONIQUE
(JA) ガスバリア性フィルムおよび電子デバイス
Abstract: front page image
(EN)Disclosed is a gas barrier film which has excellent gas barrier properties and excellent surface smoothness. Layers are strongly adhered to one another in the gas barrier film, and cracks do not easily occur when the gas barrier film is bent. Also disclosed is an electronic device which is provided with the gas barrier film. Specifically, a gas barrier film (10) comprises a base (11), and a polyorganosiloxane layer (12) and an inorganic material layer (13) which are sequentially formed on at least one surface of the base (11). The inorganic material layer (13) is formed by a dynamic ion mixing method.
(FR)Film étanche au gaz présentant d'excellentes propriétés de résistance au gaz et un excellent lissé de surface. Ce film étanche au gaz contient des couches adhérant étroitement les unes aux autres, et des fissures ne se produisent pas facilement lorsqu'on plie ce film étanche au gaz. L'invention concerne également un dispositif électronique comportant ce film étanche au gaz. Plus précisément, ce film étanche au gaz (10) comprend une base (11), une couche de polyorganosiloxane (12) et une couche de matière inorganique (13) qui sont formées de façon séquentielle sur au moins une surface de la base (11). La couche de matériau inorganique (13) est formée par un procédé de mélange ionique dynamique.
(JA) ガスバリア性および表面平滑性に優れるとともに、層同士が高度に密着しており、屈曲させたときにクラックが生じ難いガスバリア性フィルム、および、これを備えた電子デバイスを提供する。本発明のガスバリア性フィルム(10)は、基材(11)と、前記基材(11)の少なくとも一方の面に順次設けられたポリオルガノシロキサン層(12)および無機物層(13)とを有し、無機物層(13)は、ダイナミックイオンミキシング法によって成膜されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)