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1. (WO2010113399) NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/113399    International Application No.:    PCT/JP2010/001879
Publication Date: 07.10.2010 International Filing Date: 16.03.2010
IPC:
H01L 33/40 (2010.01), H01L 21/28 (2006.01), H01L 33/32 (2010.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
OYA, Mitsuaki; (For US Only).
YOKOGAWA, Toshiya; (For US Only).
YAMADA, Atsushi; (For US Only).
ISOZAKI, Akihiro; (For US Only)
Inventors: OYA, Mitsuaki; .
YOKOGAWA, Toshiya; .
YAMADA, Atsushi; .
ISOZAKI, Akihiro;
Agent: OKUDA, Seiji; OKUDA & ASSOCIATES 10th Floor, Osaka Securities Exchange Bldg. 8-16, Kitahama 1-chome, Chuo-ku, Osaka-shi Osaka 5410041 (JP)
Priority Data:
2009-090064 02.04.2009 JP
Title (EN) NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME
(FR) ELÉMENT DE SEMI-CONDUCTEUR AU NITRURE ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(JA) 窒化物系半導体素子およびその製造方法
Abstract: front page image
(EN)A nitride semiconductor element (100) comprises a GaN substrate (10) wherein an m face (12) serves as the surface; a semiconductor laminated structure (20) formed on the m face (12) of the GaN substrate (10); and an electrode (30) formed on the semiconductor laminated structure (20). The electrode (30) includes a Zn layer (32) and a metal layer (34) formed on the Zn layer (32), and the Zn layer (32) contacts the surface of the p-type semiconductor region in the semiconductor laminated structure (20).
(FR)L'invention concerne un élément semi-conducteur au nitrure (100) comprenant un substrat GaN (10), une face m (12) servant de surface ; une structure laminée semi-conductrice (20) formée sur la face m (12) du substrat GaN (10) ; et une électrode (30) formée sur la structure laminée semi-conductrice (20). L'électrode (30) comprend une couche de Zn (32) et une couche métallique (34) formée sur la couche de Zn (32), et la couche de Zn (32) est en contact avec la surface de la région semi-conductrice de type p dans la structure laminée semi-conductrice (20).
(JA) 窒化物系半導体発光素子100は、m面12を表面とするGaN基板10と、GaN基板10のm面12の上に形成された半導体積層構造20と、半導体積層構造20の上に形成された電極30とを備えている。電極30は、Zn層32と、Zn層32の上に形成された金属層34とを含み、Zn層32は、半導体積層構造20におけるp型半導体領域の表面に接触している。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)