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1. (WO2010113375) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/113375 International Application No.: PCT/JP2010/000541
Publication Date: 07.10.2010 International Filing Date: 29.01.2010
IPC:
H01L 21/768 (2006.01) ,H01L 21/314 (2006.01) ,H01L 23/522 (2006.01)
Applicants: NOMURA, Kotaro; null (UsOnly)
PANASONIC CORPORATION[JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
Inventors: NOMURA, Kotaro; null
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg.,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2009-09156403.04.2009JP
Title (EN) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION ASSOCIÉ
(JA) 半導体装置及びその製造方法
Abstract: front page image
(EN) A semiconductor device is provided with: a first insulating film (1) which is formed on a substrate and has first wiring (2); a second insulating film (3) formed on the first insulating film (1) and the first wiring (2); and a third insulating film (4) formed on the second insulating film (3). The second insulating film (3) includes holes.
(FR) L'invention concerne un dispositif à semi-conducteur doté : d'un premier film isolant (1) formé sur un substrat et comportant un premier câblage (2) ; d'un deuxième film isolant (3) formé sur le premier film isolant (1) et le premier câblage (2) ; et d'un troisième film isolant (4) formé sur le deuxième film isolant (3). Le deuxième film isolant (3) comprend des trous.
(JA)  半導体装置は、基板の上に形成され、第1の配線2を有する第1の絶縁膜1と、第1の絶縁膜1及び第1の配線2の上に形成された第2の絶縁膜3と、第2の絶縁膜3の上に形成された第3の絶縁膜4とを備えている。第2の絶縁膜3は、空孔を含んでいる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)