WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Options
Query Language
Stem
Sort by:
List Length
Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2010113370) CHEMICALLY AMPLIFIED RESIST MATERIAL AND METHOD FOR FORMING PATTERN USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/113370 International Application No.: PCT/JP2010/000189
Publication Date: 07.10.2010 International Filing Date: 15.01.2010
IPC:
G03F 7/004 (2006.01) ,G03F 7/039 (2006.01) ,H01L 21/027 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants: ENDOU, Masayuki; null (UsOnly)
SASAGO, Masaru; null (UsOnly)
PANASONIC CORPORATION[JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
Inventors: ENDOU, Masayuki; null
SASAGO, Masaru; null
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg.,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2009-08470331.03.2009JP
Title (EN) CHEMICALLY AMPLIFIED RESIST MATERIAL AND METHOD FOR FORMING PATTERN USING SAME
(FR) MATÉRIAU DE RÉSIST AMPLIFIÉ CHIMIQUEMENT ET PROCÉDÉ DE FORMATION D'UN MOTIF À L'AIDE DE CE DERNIER
(JA) 化学増幅型レジスト材料及びそれを用いたパターン形成方法
Abstract:
(EN) First of all, a resist film (102) is formed, on a substrate (101), from a chemically amplified resist material which contains a first photoacid generator containing fluorine and a polymer having a second photoacid generator that contains no fluorine and is composed of an onium salt. Next, a pattern exposure is carried out by selectively irradiating the thus-formed resist film (102) with exposure light that is composed of extreme ultraviolet light, and then the resist film (102) having been subjected to the pattern exposure is heated. After that, the heated resist film (102) is developed, so that a resist pattern (102a) is formed from the resist film (102).
(FR) La présente invention se rapporte tout d'abord à un film de résist (102) qui est formé sur un substrat (101) à partir d'un matériau de résist amplifié chimiquement qui contient un premier générateur photoacide contenant du fluor, et un polymère ayant un second générateur photoacide qui ne contient pas de fluor et est composé d'un sel d'onium. Ensuite, une exposition de motif est effectuée en irradiant de manière sélective le film de résist ainsi formé (102) avec une lumière d'exposition qui est composée d'une lumière dans l'extrême ultraviolet et, alors, le film de résist (102) ayant été soumis à l'exposition de motif est chauffé. Après cela, le film de résist chauffé (102) est développé de telle sorte qu'un motif de résist (102a) est formé à partir du film de résist (102).
(JA)  まず、基板(101)の上に、フッ素を含む第1の光酸発生剤とフッ素を含まず且つオニウム塩からなる第2の光酸発生剤を有するポリマーとを含む化学増幅型レジスト材料からレジスト膜(102)を形成する。続いて、形成されたレジスト膜(102)に極紫外線からなる露光光を選択的に照射することによりパターン露光を行い、パターン露光が行われたレジスト膜(102)を加熱する。続いて、加熱されたレジスト膜(102)に対して現像を行って、該レジスト膜(102)からレジストパターン(102a)を形成する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)