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1. (WO2010113238) NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/113238 International Application No.: PCT/JP2009/007284
Publication Date: 07.10.2010 International Filing Date: 25.12.2009
IPC:
H01L 33/32 (2010.01) ,H01L 21/28 (2006.01) ,H01L 33/40 (2010.01)
Applicants: OYA, Mitsuaki; null (UsOnly)
YOKOGAWA, Toshiya; null (UsOnly)
YAMADA, Atsushi; null (UsOnly)
ISOZAKI, Akihiro; null (UsOnly)
PANASONIC CORPORATION[JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
Inventors: OYA, Mitsuaki; null
YOKOGAWA, Toshiya; null
YAMADA, Atsushi; null
ISOZAKI, Akihiro; null
Agent: OKUDA, Seiji; OKUDA & ASSOCIATES, 10th Floor, Osaka Securities Exchange Bldg., 8-16, Kitahama 1-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Priority Data:
2009-09151403.04.2009JP
Title (EN) NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME
(FR) ÉLÉMENT À SEMI-CONDUCTEURS DE NITRURE ET SON PROCÉDÉ DE FABRICATION
(JA) 窒化物系半導体素子およびその製造方法
Abstract: front page image
(EN) A nitride semiconductor light emitting element (100) is provided with: a GaN substrate (10) having an m-plane (12) as the surface; a semiconductor multilayer structure (20) formed on the m-plane (12) of the GaN substrate (10); and an electrode (30) formed on the semiconductor multilayer structure (20). The electrode (30) includes a Zn layer (32) and an Ag layer (34) formed on the Zn layer (32), and the Zn layer (32) is in contact with the surface of the p-type semiconductor region in the semiconductor multilayer structure (20).
(FR) L'invention concerne un élément émetteur de lumière à semi-conducteurs de nitrure (100) comprenant : un substrat GaN (10) présentant une surface à plan m (12); une structure multicouche à semi-conducteurs (20) formée sur le plan m du substrat GaN (10); et une électrode (30) formée sur la structure multicouche à semi-conducteurs (20). L'électrode (30) comprend une couche Zn (32) sur laquelle est formée une couche Ag (34), et la couche Zn (32) est en contact avec la surface de la région à semi-conducteurs de type p dans la structure multicouche à semi-conducteurs (20).
(JA)  窒化物系半導体発光素子100は、m面12を表面とするGaN基板10と、GaN基板10のm面12の上に形成された半導体積層構造20と、半導体積層構造20の上に形成された電極30とを備えている。電極30は、Zn層32と、Zn層32の上に形成されたAg層34とを含み、Zn層32は、半導体積層構造20におけるp型半導体領域の表面に接触している。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)