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1. (WO2010113163) VERTICAL ORGANIC FIELD EFFECT TRANSISTOR AND METHOD OF ITS MANUFACTURE

Pub. No.:    WO/2010/113163    International Application No.:    PCT/IL2010/000286
Publication Date: Fri Oct 08 01:59:59 CEST 2010 International Filing Date: Wed Apr 07 01:59:59 CEST 2010
IPC: H01L 21/336
H01L 29/417
H01L 29/786
H01L 51/00
H01L 51/05
H01L 51/10
H01L 51/52
Applicants: TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD
TESSLER, Nir
BEN-SASSON, Ariel
Inventors: TESSLER, Nir
BEN-SASSON, Ariel
Title: VERTICAL ORGANIC FIELD EFFECT TRANSISTOR AND METHOD OF ITS MANUFACTURE
Abstract:
An electronic device (100) is presented, being configured for example as a vertical field effect transistor. The device comprises an electrically-conductive perforated patterned structure (102) which is enclosed between a dielectric layer (105) and an active element (106) of the electronic device (100). The electrically-conductive perforated patterned structure (102) comprises a geometrical pattern defining an array of spaced- apart perforation regions (108) surrounded by continuous electrically conductive regions (110). The pattern is such as to allow the active element (106) of the electronic device (100) to be in direct contact with said dielectric layer (105) aligned with the perforation regions (108). A material composition of the device (100) and features of said geometrical pattern are selected to provide a desired electrical conductance of the electrically-conductive perforated patterned structure (102) and a desired profile of a charge carriers' injection barrier along said structure (102).