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1. (WO2010112428) PRODUCTION OF A MICROELECTRONIC DEVICE COMPRISING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR, THE GATE OF WHICH IS PRODUCED IN THE SAME LAYER AS THE MOVABLE STRUCTURE OF SAID COMPONENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/112428 International Application No.: PCT/EP2010/054023
Publication Date: 07.10.2010 International Filing Date: 26.03.2010
IPC:
B81C 1/00 (2006.01)
Applicants: OLLIER, Eric[FR/FR]; FR (UsOnly)
BERTHELOT, Audrey[FR/FR]; FR (UsOnly)
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES[FR/FR]; 25 rue Leblanc Bâtiment "Le Ponant D" F-75015 Paris, FR (AllExceptUS)
Inventors: OLLIER, Eric; FR
BERTHELOT, Audrey; FR
Agent: ILGART, Jean-Christophe; Brevalex 95, rue d'Amsterdam F-75378 Paris Cedex 8, FR
Priority Data:
095198630.03.2009FR
Title (EN) PRODUCTION OF A MICROELECTRONIC DEVICE COMPRISING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR, THE GATE OF WHICH IS PRODUCED IN THE SAME LAYER AS THE MOVABLE STRUCTURE OF SAID COMPONENT
(FR) REALISATION D'UN DISPOSITIF MICRO-ELECTRONIQUE COMPORTANT UN COMPOSANT NEMS EN SILICIUM MONOCRISTALLIN ET UN TRANSISTOR DONT LA GRILLE EST REALISEE DANS LA MEME COUCHE QUE LA STRUCTURE MOBILE DE CE COMPOSANT
Abstract: front page image
(EN) The invention relates to a method for producing a microelectronic device that includes, on a single substrate (100, 200), at least one electromechanical component (C) having a movable monocrystalline semiconductor structure and means for actuating and/or detecting the movable structure, and at least one transistor (T). The method includes the following steps consisting in: a) providing a substrate that has at least one first semiconducting layer (100, 200) comprising at least one region (104, 204) in which a channel area of the transistor is provided; and b) etching a second semiconducting layer (112, 212) made of a given semiconducting material and resting on an insulating layer (106, 206) that is placed on the first semiconducting layer, so as to form at least one pattern (M1) of the movable structure of the component in a monocrystalline semiconductor area (112a, 212a) of the second semiconducting layer, as well as at least one gate pattern (M'1) of the transistor opposite the above-mentioned region.
(FR) L' invention concerne un procédé de réalisation d'un dispositif microélectronique comprenant, sur un même substrat (100, 200), au moins un composant électro-mécanique (C) doté d'une structure mobile en semi-conducteur monocristallin et de moyens d' actionnement et/ou de détection de la structure mobile, et d'au moins un transistor (T), le procédé comprenant les étapes consistant à : a) prévoir un substrat doté d'au moins une première couche semi-conductrice (100, 200) comportant au moins une région (104, 204) dans laquelle une zone de canal dudit transistor est prévue, b) graver une deuxième couche semi-conductrice (112, 212) à base d'un matériau semi-conducteur donné, reposant sur une couche isolante (106, 206) placée sur la première couche semi-conductrice, de manière à former, au moins un motif (M1) de la dite structure mobile du dit composant dans une zone de semi-conducteur monocristallin (112a, 212a) de la deuxième couche semi-conductrice, et au moins un motif (M'1) de grille du dit transistor en regard de ladite région donnée.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)