WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2010111857) METHOD AND BODY POTENTIAL MODULATION CIRCUIT WITH ANTI PROCESS VARIATION IN SUBTHRESHOLD INTEGRATED CIRCUIT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2010/111857    International Application No.:    PCT/CN2009/073744
Publication Date: 07.10.2010 International Filing Date: 04.09.2009
IPC:
H03B 5/00 (2006.01), H03K 3/356 (2006.01)
Applicants: ZHEJIANG UNIVERSITY [CN/CN]; 38 Zheda Road Hangzhou, Zhejiang 310029 (CN) (For All Designated States Except US).
LUO, Hao [CN/CN]; (CN) (For US Only).
HAN, Yan [CN/CN]; (CN) (For US Only)
Inventors: LUO, Hao; (CN).
HAN, Yan; (CN)
Agent: SHANGHAI PATENT & TRADEMARK LAW OFFICE, LLC; 435 Guiping Road, Xuhui Shanghai 200233 (CN)
Priority Data:
200910301327.1 03.04.2009 CN
Title (EN) METHOD AND BODY POTENTIAL MODULATION CIRCUIT WITH ANTI PROCESS VARIATION IN SUBTHRESHOLD INTEGRATED CIRCUIT
(FR) PROCEDE ET CIRCUIT DE MODULATION DE TENSION DE CORPS RESISTANT AUX FLUCTUATIONS DE TRAITEMENT DANS UN CIRCUIT INTEGRE DE SOUS-SEUIL
(ZH) 亚阈值集成电路中抗工艺涨落的方法和体电位调制电路
Abstract: front page image
(EN)A method and a body potential modulation circuit with anti process variation in the subthreshold integrated circuit are disclosed. The body potential modulation circuit includes an object MOS device (11), an induction MOS device (12) and a current-converting-voltage circuit (13). The induction current output by the induction MOS device is converted to the induction voltage by the current-converting-voltage circuit, the induction voltage is fed back to the body end of the object MOS device, and the body potential of the object MOS device is modulated.
(FR)L'invention concerne un procédé et un circuit de modulation de potentiel de corps résistant aux fluctuations de traitement dans un circuit intégré de sous-seuil. Ledit circuit de modulation de potentiel comprend un dispositif MOS objet (11), un dispositif MOS à induction (12) et un circuit de conversion tension-courant (13). La sortie de courant d'induction par le dispositif MOS à induction est convertie en tension d'induction par le circuit de conversion courant-tension, la tension d'induction est renvoyée à l'extrémité du corps du dispositif MOS objet et le potentiel de corps du dispositif MOS objet est modulé.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)