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1. (WO2010111832) SUBSTRATE WARPAGE-REDUCING STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2010/111832 International Application No.: PCT/CN2009/071115
Publication Date: 07.10.2010 International Filing Date: 31.03.2009
IPC:
H01L 21/00 (2006.01) ,B32B 5/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
5
Layered products characterised by the non-homogeneity or physical structure of a layer
Applicants: LIN, Jyh-Rong[CN/CN]; CN (UsOnly)
XIE, Bin[CN/CN]; CN (UsOnly)
YEUNG, Yeung[CN/CN]; CN (UsOnly)
SHI, Xunqing[SG/CN]; CN (UsOnly)
CHUNG, Chang Hwa[US/CN]; CN (UsOnly)
HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO. LTD[CN/CN]; 3rd Floor, Bio-Informatics Centre 2 Science Park West Avenue, Hong Kong Science Park Hong Kong, CN (AllExceptUS)
Inventors: LIN, Jyh-Rong; CN
XIE, Bin; CN
YEUNG, Yeung; CN
SHI, Xunqing; CN
CHUNG, Chang Hwa; CN
Agent: CHINA TRUER IP; Suite 2209, Block B, Jia Zhao Ye Centre Shangbu Road, Futian District Shenzhen, Guangdong 518031, CN
Priority Data:
Title (EN) SUBSTRATE WARPAGE-REDUCING STRUCTURE
(FR) STRUCTURE RÉDUCTRICE DE GAUCHISSEMENT DE SUBSTRAT
Abstract:
(EN) A method to provide warpage control of a substrate and an apparatus designed to perform this method are disclosed The method comprises arranging a first surface-modifying material on a first surface of a substrate, wherein the first surface-modifying material has a first pattern comprising one or more thickness to control warpage of the substrate.
(FR) L'invention porte sur un procédé permettant d'assurer une réduction de gauchissement d'un substrat et sur un appareil conçu pour mettre en œuvre ce procédé. Le procédé comprend l'agencement d'un premier matériau modificateur de surface sur une première surface d'un substrat, le premier matériau modificateur de surface ayant un premier motif comprenant une ou plusieurs épaisseurs pour réduire un gauchissement du substrat.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)