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1. WO2010094002 - RF BUS AND RF RETURN BUS FOR PLASMA CHAMBER ELECTRODE

Publication Number WO/2010/094002
Publication Date 19.08.2010
International Application No. PCT/US2010/024206
International Filing Date 13.02.2010
IPC
H05H 1/36 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
26Plasma torches
32using an arc
34Details, e.g. electrodes, nozzles
36Circuit arrangements
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01J 37/32091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32091the radio frequency energy being capacitively coupled to the plasma
H01J 37/32174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
Applicants
  • APPLIED MATERIALS, INC. [US]/[US] (AllExceptUS)
  • SORENSEN, Carl, A. [US]/[US] (UsOnly)
  • KUDELA, Jozef [SK]/[US] (UsOnly)
  • TINER, Robin, L. [US]/[US] (UsOnly)
  • ANWAR, Suhail [US]/[US] (UsOnly)
Inventors
  • SORENSEN, Carl, A.
  • KUDELA, Jozef
  • TINER, Robin, L.
  • ANWAR, Suhail
Agents
  • STERN, Robert, J.
Priority Data
61/152,60113.02.2009US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) RF BUS AND RF RETURN BUS FOR PLASMA CHAMBER ELECTRODE
(FR) BUS RF ET BUS RETOUR RF POUR ÉLECTRODE DE CHAMBRE PLASMA
Abstract
(EN)
For coupling RF power from an RF input (40) of a plasma chamber to the interior (11) of a plasma chamber, an RF bus conductor (43, 44) is connected between the RF input and a plasma chamber electrode (20-26). In one embodiment, an RF return bus conductor (53, 54) is connected to an electrically grounded wall (14-18) of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
(FR)
En vue de coupler une puissance radioélectrique provenant d'une entrée RF (40) d'une chambre plasma à l'intérieur (11) d'une chambre plasma, un conducteur de bus RF (43, 44) est connecté entre l'entrée RF et une électrode de chambre plasma (20-26). Selon un mode de réalisation, un conducteur de bus retour RF (53, 54) est connecté à une paroi électriquement mise à la terre (14-18) de la chambre, et le conducteur de bus RF ainsi que le conducteur de bus retour RF ont des surfaces respectives qui sont parallèles et qui se font face. Selon un autre mode de réalisation, le conducteur de bus RF est pourvu d'une coupe transversale ayant une dimension plus longue orientée de façon perpendiculaire à la surface de l'électrode de chambre plasma qui est la plus proche du conducteur de bus RF.
Latest bibliographic data on file with the International Bureau