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1. WO2010091936 - METHOD FOR STRUCTURING A SEMICONDUCTOR SURFACE, AND SEMICONDUCTOR CHIP

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Publication Number WO/2010/091936
Publication Date 19.08.2010
International Application No. PCT/EP2010/050742
International Filing Date 22.01.2010
IPC
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/22 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
CPC
H01L 33/0062
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
H01L 33/22
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
Applicants
  • OSRAM Opto Semiconductors GmbH [DE]/[DE] (AllExceptUS)
  • BAUR, Elmar [DE]/[DE] (UsOnly)
  • BÖHM, Bernd [DE]/[DE] (UsOnly)
  • HEINDL, Alexander [DE]/[DE] (UsOnly)
  • RODE, Patrick [DE]/[DE] (UsOnly)
  • SABATHIL, Matthias [DE]/[DE] (UsOnly)
Inventors
  • BAUR, Elmar
  • BÖHM, Bernd
  • HEINDL, Alexander
  • RODE, Patrick
  • SABATHIL, Matthias
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2009 008 223.910.02.2009DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR STRUKTURIERUNG EINER HALBLEITEROBERFLÄCHE UND HALBLEITERCHIP
(EN) METHOD FOR STRUCTURING A SEMICONDUCTOR SURFACE, AND SEMICONDUCTOR CHIP
(FR) PROCÉDÉ DE STRUCTURATION DE LA SURFACE D'UN SEMI-CONDUCTEUR ET PUCE DE SEMI-CONDUCTEUR
front page image
Abstract
(DE)
Es wird ein Verfahren zur Strukturierung einer Halbleiteroberfläche angegeben, mit den folgenden Schritten: Bereitstellen eines ersten Wafers (1), welcher eine strukturierte Oberfläche (11) aufweist; Bereitstellen eines zweiten Halbleiterwafers (3); Aufbringen eines Fotolacks (2) auf die Außenflächen des zweiten Halbleiterwafers (3); Strukturieren der dem zweiten Halbleiterwafer (3) abgewandten Oberfläche des Fotolacks (2) durch Abdrucken der strukturierten Oberfläche (11) des ersten Wafers (1) in den Fotolack (2); Anwendung eines Strukturierungsverfahrens (6) auf die strukturierte Oberfläche (21) des Fotolacks (2), wobei die auf dem Fotolack (2) aufgebrachte Struktur zumindest stellenweise auf die Außenfläche (31) des zweiten Halbleiterwafers (3) übertragen wird.
(EN)
A method for structuring a semiconductor surface is disclosed. Said method includes the following steps: providing a first wafer (1) that has a structured surface (11); providing a second semiconductor wafer (2); applying a photoresist (2) to the outer surfaces of the second semiconductor wafer (3); structuring the surface of the photoresist (2) facing away from the second semiconductor wafer (3) by impressing the structured surface (11) of the first wafer (1) into the photoresist (2); using a structuring process (6) on the structured surface (21) of the photoresist (2) such that the structure applied to the photoresist (2) is transferred to at least some points on the outer surface (31) of the second semiconductor wafer (3).
(FR)
L'invention concerne un procédé de structuration de la surface d'un semi-conducteur, comprenant les étapes suivantes : fourniture d'une première tranche (1) possédant une surface structurée (11) ; fourniture d'une deuxième tranche de semi-conducteur (3) ; application d'un vernis photosensible (2) sur les surfaces extérieures de la deuxième tranche de semi-conducteur (3) ; structuration de la surface du vernis photosensible (2) tournée à l'opposé de la deuxième tranche de semi-conducteur (3) en appliquant la surface structurée (11) de la première tranche (1) sur le vernis photosensible (2) ; utilisation d'un procédé de structuration (6) sur la surface structurée (21) du vernis photosensible (2). La structure appliquée au vernis photosensible (2) est au moins par endroits transférée sur la surface extérieure (31) de la deuxième tranche de semi-conducteur (3).
Also published as
DE102009008223
US20120032306
CN102308396
KR1020110115166
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