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1. WO2010087518 - EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND MEHTOD FOR PRODUCING SAME

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Publication Number WO/2010/087518
Publication Date 05.08.2010
International Application No. PCT/JP2010/051655
International Filing Date 29.01.2010
IPC
C30B 29/36 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
C23C 16/42 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42Silicides
C30B 25/20 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
18characterised by the substrate
20the substrate being of the same materials as the epitaxial layer
H01L 21/205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
CPC
C23C 16/325
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
32Carbides
325Silicon carbide
C30B 25/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
14Feed and outlet means for the gases; Modifying the flow of the reactive gases
C30B 25/186
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
186being specially pre-treated by, e.g. chemical or physical means
C30B 25/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
20the substrate being of the same materials as the epitaxial layer
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
H01L 21/02378
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02378Silicon carbide
Applicants
  • 新日本製鐵株式会社 NIPPON STEEL CORPORATION [JP]/[JP] (AllExceptUS)
  • 藍郷崇 AIGO, Takashi [JP]/[JP] (UsOnly)
  • 柘植弘志 TSUGE, Hiroshi [JP]/[JP] (UsOnly)
  • 星野泰三 HOSHINO, Taizo [JP]/[JP] (UsOnly)
  • 藤本辰雄 FUJIMOTO, Tatsuo [JP]/[JP] (UsOnly)
  • 勝野正和 KATSUNO, Masakazu [JP]/[JP] (UsOnly)
  • 中林正史 NAKABAYASHI, Masashi [JP]/[JP] (UsOnly)
  • 矢代弘克 YASHIRO, Hirokatsu [JP]/[JP] (UsOnly)
Inventors
  • 藍郷崇 AIGO, Takashi
  • 柘植弘志 TSUGE, Hiroshi
  • 星野泰三 HOSHINO, Taizo
  • 藤本辰雄 FUJIMOTO, Tatsuo
  • 勝野正和 KATSUNO, Masakazu
  • 中林正史 NAKABAYASHI, Masashi
  • 矢代弘克 YASHIRO, Hirokatsu
Agents
  • 青木篤 AOKI, Atsushi
Priority Data
2009-01932330.01.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND MEHTOD FOR PRODUCING SAME
(FR) SUBSTRAT MONOCRISTALLIN DE CARBURE DE SILICIUM ÉPITAXIAL ET SON PROCÉDÉ DE FABRICATION
(JA) エピタキシャル炭化珪素単結晶基板及びその製造方法
front page image
Abstract
(EN)
Disclosed is an epitaxial SiC single crystal substrate which has a high-quality epitaxial film that is obtained by epitaxial growth using a substrate having an off angle of 6° or less, while suppressing the formation of step-bunching. Also disclosed is a method for producing the epitaxial SiC single crystal substrate. Specifically disclosed is an epitaxial silicon carbide single crystal substrate which is obtained by forming a silicon carbide single crystal thin film on a silicon carbide single crystal substrate having an off angle of 6° or less. The epitaxial silicon carbide single crystal substrate is characterized in that the surface roughness (Ra) of the surface of the silicon carbide single crystal thin film is not more than 0.5 nm. Also specifically disclosed is a method for producing the epitaxial silicon carbide single crystal substrate.
(FR)
L'invention porte sur un substrat monocristallin de SiC épitaxial qui a un film épitaxial de qualité élevée qui est obtenu par croissance épitaxiale à l'aide d'un substrat ayant un angle de décalage de 6° ou moins, tout en supprimant la mise en paquets de marches. L'invention porte également sur un procédé de production du substrat monocristallin de SiC épitaxial. De façon spécifique, l'invention porte sur un substrat monocristallin de carbure de silicium épitaxial qui est obtenu par formation d'un film mince de monocristal de carbure de silicium sur un substrat monocristallin de carbure de silicium ayant un angle de décalage de 6° ou moins. Le substrat monocristallin de carbure de silicium épitaxial est caractérisé en ce que la rugosité de surface (Ra) de la surface du film mince monocristallin de carbure de silicium n'est pas supérieure à 0,5 nm. De façon spécifique, l'invention porte également sur un procédé de production du substrat monocristallin de carbure de silicium épitaxial.
(JA)
本発明は、オフ角度が６°乃至それ以下の基板を用いたエピタキシャル成長において、ステップ－バンチングの発生を抑えた高品質エピタキシャル膜を有するエピタキシャルSiC単結晶基板、及びその製造方法を提供するものである。オフ角度が６°以下である炭化珪素単結晶基板上に炭化珪素単結晶薄膜を形成したエピタキシャル炭化珪素単結晶基板であって、前記炭化珪素単結晶薄膜表面の表面粗さ(Ra値)が０．５nm以下であることを特徴とするエピタキシャル炭化珪素単結晶基板エピタキシャル炭化珪素単結晶基板、及びその製造方法である。
Also published as
EP2395133
US20110278596
CN102301043
KR1020110093892
JPWO2010087518
US20150075422
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