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1. (WO2010085350) NON-CONDENSING THERMOS CHUCK
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/085350 International Application No.: PCT/US2010/000168
Publication Date: 29.07.2010 International Filing Date: 22.01.2010
IPC:
H01L 21/00 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
AXCELIS TECHNOLOGIES, INC. [US/US]; Attn: Denis A. Robitaille 108 Cherry Hill Drive Beverly, Massachusetts 01915, US (AllExceptUS)
LEE, William, Davis [US/US]; US (UsOnly)
LAFONTAINE, Marvin [US/US]; US (UsOnly)
PUROHIT, Ashwin [US/US]; US (UsOnly)
Inventors:
LEE, William, Davis; US
LAFONTAINE, Marvin; US
PUROHIT, Ashwin; US
Priority Data:
12/358,78823.01.2009US
Title (EN) NON-CONDENSING THERMOS CHUCK
(FR) SUPPORT ISOTHERME SANS CONDENSATION
Abstract:
(EN) The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
(FR) La présente invention concerne un appareil et un procédé de formation d'une couche isotherme entourant un support de tranche lors d'une implantation ionique. La couche isotherme est située en dessous d'une surface de blocage et comprend un espace vide et une enveloppe externe encapsulant l'espace vide. La couche isotherme empêche les transferts thermiques entre le support refroidi et l'environnement plus chaud dans une chambre de procédé et permet donc d'éviter la formation de condensation sur l'extérieur du support.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2389682JP2012516054CN102292796KR1020110111500