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1. (WO2010085109) ANTENNA FOR INDUCTIVELY COUPLED PLASMA GENERATION, INDUCTIVELY COUPLED PLASMA GENERATOR, AND METHOD OF DRIVING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/085109 International Application No.: PCT/KR2010/000417
Publication Date: 29.07.2010 International Filing Date: 22.01.2010
IPC:
H05H 1/34 (2006.01) ,H05H 1/30 (2006.01) ,H05H 1/24 (2006.01) ,H01L 21/3065 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
26
Plasma torches
32
using an arc
34
Details, e.g. electrodes, nozzles
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
26
Plasma torches
30
using applied electromagnetic fields, e.g. high-frequency or microwave energy
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
SNU R&DB FOUNDATION [KR/KR]; San 56-1, Sillim-dong, Gwanak-gu Seoul 151-742, KR (AllExceptUS)
PARK, Young June [KR/KR]; KR (UsOnly)
KIM, Il Wook [KR/KR]; KR (UsOnly)
Inventors:
PARK, Young June; KR
KIM, Il Wook; KR
Agent:
NAM, Jung Kil; 2nd Fl., Hanjin Building, 607-12, Yeoksam-dong Gangnam-gu Seoul 135-080, KR
Priority Data:
10-2009-000533522.01.2009KR
Title (EN) ANTENNA FOR INDUCTIVELY COUPLED PLASMA GENERATION, INDUCTIVELY COUPLED PLASMA GENERATOR, AND METHOD OF DRIVING THE SAME
(FR) ANTENNE POUR GÉNÉRATION DE PLASMA À COUPLAGE INDUCTIF, GÉNÉRATEUR DE PLASMA À COUPLAGE INDUCTIF ET SON PROCÉDÉ DE COMMANDE
Abstract:
(EN) In one embodiment, the antenna for inductively coupled plasma generation includes a first end connected to an alternating current (AC) power supply, a second end connected to a ground terminal, and an antenna coil unit connected to the first end and the second end and configured to generate an induced electric field when power of the AC power supply is applied. The antenna coil unit includes one or more sub-coil units. The one or more sub-coil units generate a magnetic field in a region adjacent to the antenna coil unit in response to the applied power.
(FR) La présente invention porte, dans un mode de réalisation, sur une antenne permettant la génération de plasma à couplage inductif. L'antenne comprend une première extrémité connectée à une alimentation électrique en courant alternatif (CA), une seconde extrémité connectée à une borne de masse, et une unité de bobine d'antenne connectée à la première extrémité et à la seconde extrémité et configurée pour générer un champ électrique induit lorsqu'un courant de l'alimentation électrique CA est appliqué. L'unité de bobine d'antenne comprend une ou plusieurs unités de bobine secondaire. La ou les unités de bobine secondaire génèrent un champ magnétique dans une région adjacente à l'unité de bobine d'antenne en réponse au courant appliqué.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20120037491