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1. (WO2010084532) CONDUCTIVE MEMBER AND METHOD FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/084532 International Application No.: PCT/JP2009/003219
Publication Date: 29.07.2010 International Filing Date: 09.07.2009
IPC:
C25D 7/00 (2006.01) ,C25D 5/12 (2006.01) ,C25D 5/50 (2006.01) ,H01R 13/03 (2006.01)
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
7
Electroplating characterised by the article coated
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
5
Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
10
Electroplating with more than one layer of the same or of different metals
12
at least one layer being of nickel or chromium
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
D
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; JOINING WORKPIECES BY ELECTROLYSIS; APPARATUS THEREFOR
5
Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
48
After-treatment of electroplated surfaces
50
by heat-treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
R
ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
13
Details of coupling devices of the kinds covered by groups H01R12/7087
02
Contact members
03
characterised by the material, e.g. plating or coating materials
Applicants:
三菱伸銅株式会社 MITSUBISHI SHINDOH CO., LTD. [JP/JP]; 東京都品川区北品川4-7-35 4-7-35, Kitashinagawa, Shinagawa-ku, Tokyo 1408550, JP (AllExceptUS)
櫻井健 SAKURAI, Takeshi [JP/JP]; JP (UsOnly)
石川誠一 ISHIKAWA, Seiichi [JP/JP]; JP (UsOnly)
久保田賢治 KUBOTA, Kenji [JP/JP]; JP (UsOnly)
玉川隆士 TAMAGAWA, Takashi [JP/JP]; JP (UsOnly)
Inventors:
櫻井健 SAKURAI, Takeshi; JP
石川誠一 ISHIKAWA, Seiichi; JP
久保田賢治 KUBOTA, Kenji; JP
玉川隆士 TAMAGAWA, Takashi; JP
Agent:
青山正和 AOYAMA, Masakazu; JP
Priority Data:
2009-00975220.01.2009JP
2009-03930323.02.2009JP
Title (EN) CONDUCTIVE MEMBER AND METHOD FOR PRODUCING THE SAME
(FR) ÉLÉMENT CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 導電部材及びその製造方法
Abstract:
(EN) Disclosed is a conductive member having a stable contact resistance, which is hardly separated and requires a small inserting/drawing force when used as a connector. The conductive member is characterized in that a Cu-Sn intermetallic compound layer (3) and an Sn surface layer (4) are formed in this order on the surface of a Cu substrate (1) through an Ni base layer (2); the Cu-Sn intermetallic compound layer (3) is composed of a Cu3Sn layer (5) arranged on the Ni base layer (2) and a Cu6Sn5 layer (6) arranged on the Cu3Sn layer (5); the Cu-Sn intermetallic compound layer (3) obtained by bonding the Cu3Sn layer (5) and the Cu6Sn5 layer (6) is provided with recesses and projections in the surface which is in contact with the Sn surface layer (4); thicknesses X at the recessed portions (7) are set to 0.05-1.5 μm; the area coverage of the Cu3Sn layer (5) relative to the Ni base layer (2) is not less than 60%; the ratio of the thicknesses Y at the projected portions (8) to the thicknesses at the recessed portions (7) in the Cu-Sn intermetallic compound layer (3) is 1.2-5; and the average thickness of the Cu3Sn layer (5) is 0.01-0.5 μm.
(FR) La présente invention porte sur un élément conducteur possédant une résistance de contact stable, qui est à peine séparé et nécessite une faible force de traction/d'insertion lorsqu'il est utilisé comme connecteur. L'élément conducteur est caractérisé en ce qu'une couche composite intermétallique cuivre-étain (3) et une couche de surface en étain (4) sont formées dans cet ordre sur la surface d'un substrat en cuivre (1) à l'aide d'une couche de base en nickel (2) ; la couche composite intermétallique cuivre-étain (3) est composée d'une couche Cu3Sn (5) disposée sur la couche de base en nickel (2) et d'une couche de Cu6Sn5 (6) disposée sur la couche de Cu3Sn (5) ; la couche de composé intermétallique cuivre-étain (3) obtenue par collage de la couche Cu3Sn (5) et de la couche de Cu6Sn5 (6) comporte des évidements et des saillies dans la surface qui est en contact avec la couche de surface en étain (4) ; les épaisseurs X aux parties en évidement (7) sont fixées entre 0,05 et 1,5 µm ; la zone de couverture de la couche de Cu3Sn (5) par rapport à la couche de base de nickel (2) étant inférieure à 60 % ; le rapport des épaisseurs Y des parties en saillie (8) sur les épaisseurs aux parties en évidement (7) dans la couche de composé intermétallique cuivre-étain (3) est compris entre 1,2 et 5 ; et l'épaisseur moyenne de la couche de Cu3Sn (5) est comprise entre 0,01 et 0,5 µm.
(JA) 【課題】安定した接触抵抗を有するとともに、剥離し難く、また、コネクタとして用いる場合に挿抜力を小さくする。 【解決手段】 Cu系基材1の表面に、Ni系下地層2を介して、Cu-Sn金属間化合物層3、Sn系表面層4がこの順に形成されるとともに、Cu-Sn金属間化合物層3はさらに、Ni系下地層2の上に配置されるCuSn層5と、CuSn層5の上に配置されるCuSn層6とからなり、これらCuSn層5及びCuSn層6を合わせたCu-Sn金属間化合物層3のSn系表面層4と接する面に凹凸を有しており、その凹部7の厚さXが0.05~1.5μmとされ、かつ、Ni系下地層2に対するCuSn層5の面積被覆率が60%以上であり、Cu-Sn金属間化合物層3の凹部7に対する凸部8の厚さYの比率が1.2~5であり、CuSn層5の平均厚さは0.01~0.5μmである。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2351875US20110266035CN102239280KR1020110110764