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1. (WO2010084101) OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/084101 International Application No.: PCT/EP2010/050536
Publication Date: 29.07.2010 International Filing Date: 18.01.2010
IPC:
H01L 33/62 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/60 (2010.01) ,H01L 33/64 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
60
Reflective elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
64
Heat extraction or cooling elements
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstrasse 4 93055 Regensburg, DE (AllExceptUS)
AHLSTEDT, Magnus [SE/DE]; DE (UsOnly)
AHLSTEDT, Mikael [SE/DE]; DE (UsOnly)
GROLIER, Vincent [FR/DE]; DE (UsOnly)
Inventors:
AHLSTEDT, Magnus; DE
AHLSTEDT, Mikael; DE
GROLIER, Vincent; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Ridlerstrasse 55 80339 München, DE
Priority Data:
10 2009 005 709.922.01.2009DE
Title (DE) OPTOELEKTONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUTEILS
(EN) OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
(FR) COMPOSANT À SEMI-CONDUCTEURS OPTOÉLECTRONIQUE ET PROCÉDÉ DE FABRICATION D'UN COMPOSANT À SEMI-CONDUCTEURS OPTOÉLECTRONIQUE
Abstract:
(DE) Es wird ein otoelektronisches Halbleiterbauteil angegeben, mit zumindest einem optoelektronischen Halbleiterchip (1), der eine Strahlungsdurchtrittfläche (11) aufweist, wobei die Strahlungsdurchtrittfläche (11) an einer Hauptfläche (10) des Halbeiterchips (1) ausgebildet ist; einer Abdeckplatte (2), die am optoelektronischen Halbleiterchip (1) befestigt ist und die gesamte Strahlungsdurchtrittfläche (11) des Halbleiterchips (1) überspannt, wobei die Abdeckplatte (2) den Halbleiterchip (1) seitlich überragt; einer Kontaktstelle (3), die an der dem Halbleiterchip (1) zugewandten Seite der Abdeckplatte (2) an der Abdeckplatte (2) befestigt ist; wobei die Kontaktstelle (3) mittels eines Verbindungselements (4) mit zumindest einer Anschlussstelle (13) des Halbleiterchips (1) elektrisch leitend verbunden ist; und die Anschlussstelle (13) an der Hauptfläche (10) des Halbeiterchips (1) angeordnet ist.
(EN) The invention relates to an optoelectronic semiconductor component comprising at least one optoelectronic semiconductor chip (1), which comprises a radiation passage surface (11), wherein the radiation passage surface (11) is formed on a main surface (10) of the semiconductor chip (1); a cover plate (2), which is fastened to the optoelectronic semiconductor chip (1) and spans the entire radiation passage surface (11) of the semiconductor chip (1), wherein the cover plate (2) laterally protrudes over the semiconductor chip (1); a contact point (3), which is fastened to the cover plate (2) on the side of the cover plate (2) facing the semiconductor chip (1); wherein the contact point (3) is connected in an electrically conductive manner to at least one connection point (13) of the semiconductor chip (1) by means of a connecting element (4); and the connection point (13) is arranged on the main surface (10) of the semiconductor chip (1).
(FR) L'invention concerne un composant à semi-conducteurs optoélectronique comportant au moins une puce à semi-conducteurs optoélectronique (1) présentant une surface de passage de rayonnement (11) conçue sur une surface principale (10) de la puce à semi-conducteurs (1); une plaque de couverture (2) fixée à la puce à semi-conducteurs optoélectronique (1), recouvrant toute la surface de passage de rayonnement (11) de la puce à semi-conducteurs (1), la plaque de couverture (2) faisant saillie latéralement par rapport à la puce à semi-conducteurs (1); et une zone de contact (3) fixée à la plaque de couverture (2) sur le côté de la plaque de couverture (2) orienté vers la puce à semi-conducteurs (1). La zone de contact (3) est connectée électriquement à au moins une zone de raccordement (13) de la puce à semi-conducteurs (1) au moyen d'un élément de connexion (4), et la zone de raccordement (13) est disposée sur la surface principale (10) de la puce à semi-conducteurs (1).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
EP2380218JP2012516047