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1. (WO2010082955) MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/082955 International Application No.: PCT/US2009/051186
Publication Date: 22.07.2010 International Filing Date: 20.07.2009
IPC:
H01L 21/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
Applicants:
INVISAGE TECHNOLOGIES, INC. [US/US]; 978 Hamilton Court Menlo Park, CA 94025, US (AllExceptUS)
IVANOV, Igor, Constantin [US/US]; US (UsOnly)
SARGENT, Edward, Hartley [CA/CA]; US (UsOnly)
TIAN, Hui [CN/US]; US (UsOnly)
Inventors:
IVANOV, Igor, Constantin; US
SARGENT, Edward, Hartley; US
TIAN, Hui; US
Agent:
SCHWEGMAN, LUNDBERG & WOESSNER, P.A.; P.O. Box 2938 Minneapolis, MN 55402, US
Priority Data:
61/082,47321.07.2008US
61/154,75123.02.2009US
Title (EN) MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM
(FR) MATÉRIAUX, ÉQUIPEMENT DE FABRICATION ET PROCÉDÉS POUR PHOTODÉTECTEURS SENSIBLES STABLES ET CAPTEURS D'IMAGE FABRIQUÉS À PARTIR DE CEUX-CI
Abstract:
(EN) Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type or n-type semiconductor, and the optically sensitive material has a work function Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.
(FR) L'invention porte sur des dispositifs optiquement sensibles qui comprennent un dispositif comprenant un premier contact et un second contact, ayant chacun un travail d'extraction, et un matériau optiquement sensible entre le premier contact et le second contact. Le matériau optiquement sensible comprend un semi-conducteur de type p ou de type n, et le matériau optiquement sensible a un certain travail d'extraction. Un circuit applique une tension de polarisation entre le premier contact et le second contact. Le matériau optiquement sensible a une durée de vie des électrons qui est supérieure au temps de transit des électrons du premier contact au second contact lorsque la polarisation est appliquée entre le premier contact et le second contact. Le premier contact assure une injection d'électrons et un blocage de l'extraction de trous. L'interface entre le premier contact et le matériau optiquement sensible procure une vitesse de recombinaison en surface inférieure à 1 cm/s.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN102165572